2N3019HR
Hi-Rel NPN bipolar transistor 80 V, 1 A
Datasheet — production data
Features
BVCEO IC (max) HFE at 10 V - 150 ...
2N3019HR
Hi-Rel
NPN bipolar
transistor 80 V, 1 A
Datasheet — production data
Features
BVCEO IC (max) HFE at 10 V - 150 mA Operating temperature range 80 V 1A > 100 -65°C to +200°C
■ ■ ■ ■ ■
Hi-Rel
NPN bipolar
transistor Linear gain characteristics ESCC qualified European preferred part list - EPPL Radiation level: lot specific total dose contact marketing for specified level Figure 1. Internal schematic diagram
TO-39
Description
The 2N3019HR is a silicon planar epitaxial
NPN transistor in a TO-39 package. It is specifically designed for aerospace Hi-Rel applications, and ESCC qualified in accordance with the 5201-003 specification. In case of discrepancies between this datasheet and ESCC detailed specification, the latter prevails.
www.DataSheet.net/
Table 1.
Device summary
Package TO-39 Lead finish Gold Solder Dip Marking 520101103 520101104 Type ESCC Flight EPPL Yes Packaging Strip pack
Order codes 2N3019HR
October 2012
This is information on a product in full production.
Doc ID 15384 Rev 3
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Datasheet pdf - http://www.DataSheet4U.co.kr/
Electrical ratings
2N3019HR
1
Electrical ratings
Table 2.
Symbol VCBO VCEO VEBO IC PTOT TSTG TJ
Absolute maximum ratings
Parameter Collector-base voltage (IE = 0) Collector-emitter voltage (IB = 0) Emitter-base voltage (IC = 0) Collector current Total dissipation at Tamb ≤ 25 °C Total dissipation at Tc ≤ 25 °C Storage temperature Max. operating junction temperature Value 140 80 7 1 0.8 5 -65 to 200 200 Unit V ...