2N3019HR

2N3019HR Hi-Rel NPN bipolar transistor 80 V, 1 A Datasheet — production data Features BVCEO IC (max) HFE at 10 V - 150 mA Operating temperature range 80 V 1A > 100 -65°C to +200°C ■ ■ ■ ■ ■ Hi-Rel NPN bipolar transistor Linear gain characteristics ESCC qualified European preferred part list - EPPL Radiation level: lot specific total dose contact marketing for specified level Figure 1. Internal schematic diagram TO-39 Description The 2N3019HR is a silicon planar epitaxial NPN transistor in a TO-39 package. It is specifically designed for aerospace Hi-Rel applications, and ESCC qualified in accordance with the 5201-003 specification. In case of discrepancies between this datasheet and ESCC detailed specification, the latter prevails. www.DataSheet.net/ Table 1. Device summary Package TO-39 Lead finish Gold Solder Dip Marking 520101103 520101104 Type ESCC Flight EPPL Yes Packaging Strip pack Order codes 2N3019HR October 2012 This is information on a product in full production. Doc ID 15384 Rev 3 1/9 www.st.com 9 Datasheet pdf - http://www.DataSheet4U.co.kr/ Electrical ratings 2N3019HR 1 Electrical ratings Table 2. Symbol VCBO VCEO VEBO IC PTOT TSTG TJ Absolute maximum ratings Parameter Collector-base voltage (IE = 0) Collector-emitter voltage (IB = 0) Emitter-base voltage (IC = 0) Collector current Total dissipation at Tamb ≤ 25 °C Total dissipation at Tc ≤ 25 °C Storage temperature Max. operating junction temperature Value 140 80 7 1 0.8 5 -65 to 200 200 Unit V ...