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2N3700HR Dataheets PDF



Part Number 2N3700HR
Manufacturers STMicroelectronics
Logo STMicroelectronics
Description NPN transistor
Datasheet 2N3700HR Datasheet2N3700HR Datasheet (PDF)

2N3700HR Datasheet Rad-Hard 80 V, 1 A NPN transistor 3 1 2 LCC-3 3 4 1 2 UB Pin 4 in UB is connected to the metallic lid. C (3) (2) B E (1) DS10450 Product status link 2N3700HR Note: Features VCEO IC(max.) 80 V 1A • Hermetic packages • ESCC qualified • 100 krad hFE at 10 V, 150 mA > 100 Tj(max.) 200 °C Description The 2N3700HR is a bipolar transistor able to operate under severe environment conditions and radiation exposure providing high immunity to total ionizing dose (TID)..

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2N3700HR Datasheet Rad-Hard 80 V, 1 A NPN transistor 3 1 2 LCC-3 3 4 1 2 UB Pin 4 in UB is connected to the metallic lid. C (3) (2) B E (1) DS10450 Product status link 2N3700HR Note: Features VCEO IC(max.) 80 V 1A • Hermetic packages • ESCC qualified • 100 krad hFE at 10 V, 150 mA > 100 Tj(max.) 200 °C Description The 2N3700HR is a bipolar transistor able to operate under severe environment conditions and radiation exposure providing high immunity to total ionizing dose (TID). Qualified as per ESCC 5201/004 specification and available in LCC-3 and UB hermetic packages, it is specifically recommended for space and harsh environment applications and suitable for low current and high precision circuits such preamplifiers, oscillators, current mirror configuration. In case of discrepancies between this datasheet and the relevant agency specification, the latter takes precedence. Product summary Part-number 2N3700RUBx 2N3700UBx SOC3700RHRx SOC3700HRx Product summary ESCC specification 5201/004 See Table 7 for ordering information. Package UB UB LCC-3 LCC-3 Radiation level 100 krad - 100 krad - DS6085 - Rev 15 - January 2022 For further information contact your local STMicroelectronics sales office. www.st.com 1 Electrical ratings Table 1. Absolute maximum ratings Symbol VCBO VCEO VEBO IC Collector-base voltage (IE = 0) Collector-emitter voltage (IB = 0) Emitter-base voltage (IC = 0) Collector current Parameter PTOT Total dissipation at Tamb ≤ 25 °C TOP Operating temperature range TJ Max. operating junction temperature 1. When mounted on a 15 x 15 x 0.6 mm ceramic substrate. LCC-3 and UB LCC-3 and UB(1) Table 2. Thermal data Symbol Parameter RthJA Thermal resistance junction-ambient (max) 1. When mounted on a 15 x 15 x 0.6 mm ceramic substrate. 2N3700HR Electrical ratings Value Unit 140 V 80 V 7 V 1 A 0.5 W 0.76 -65 to 200 °C 200 °C LCC-3 and UB Value 350 230(1) Unit °C/W DS6085 - Rev 15 page 2/15 2N3700HR Electrical characteristics 2 Electrical characteristics Table 3. Electrical characteristics (Tamb = 25 °C unless otherwise specified) Symbol ICBO IEBO V(BR)CBO V(BR)CEO (1) V(BR)EBO VCE(sat) (1) VBE(sat) (1) hFE (1) hfe Cobo Cibo Parameter Test conditions Collector-base cut-off current (IE = 0) VCB = 90 V VCB = 90 V, Tamb = 150 °C Emitter cut-off current (IC = 0) VEB = 5 V Collector-base breakdown voltage (IE = 0) IC = 100 µA Collector-emitter breakdown voltage (IB = 0) IC = 30 mA Emitter-base breakdown voltage (IC = 0) IE = 100 µA Collector-emitter saturation voltage IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA Base-emitter saturation voltage IC = 150 mA, IB = 15 mA IC = 10 mA, VCE = 10 V DC current gain IC = 150 mA, VCE = 10 V IC = 500 mA, VCE = 10 V IC = 150 mA, VCE = 10 V, Tamb = -55 °C Small signal current gain IC = 50 mA, f = 20 MHz, VCE = 10 V Output capacitance (IE = 0) f = 1 MHz, VCB = 10 V Intput capacitance (IC = 0) f = 1 MHz, VEB = 0.5 V Min. Max. 10 10 10 140 80 7 0.2 0.5 1.1 90 100 300 50 40 5 12 60 1. Pulsed duration = 300 µs, duty cycle > 2% Unit nA µA nA V V V V V pF pF DS6085 - Rev 15 page 3/15 2.1 2N3700HR Radiation assurance Radiation assurance Radiation test are guaranteed in compliance with ESCC 22900 and ESCC 5201/004 specifications. Each lot is tested in radiation according to the following procedure: • Standard dose rate window (typical at 0.1 rad / sec.) • Test of 11 samples (5 biased at 80% of BVceo, 5 unbiased and 1 for reference) • Acceptance criteria in compliance with the post radiation electrical characteristics as per Table 4. Table 4. ESCC 5201/004 post radiation electrical characteristics (Tamb = 25 °C unless otherwise specified) Symbol Parameter Test conditions Min. Max Unit ICBO Collector cut-off current (IE = 0) VCB = 90 V 10 nA IEBO Emitter cut-off current (IC = 0) VEB = 5 V 10 nA V(BR)CBO Collector-base breakdown voltage (IE= 0) IC = 100 μA 140 V V(BR)CEO(1) Collector-emitter breakdown voltage (IB = 0) IC = 30 mA 80 V V(BR)EBO Emitter-base breakdown voltage (IC= 0) IE = 100 μA 7 V VCE(sat)(1) Collector-emitter saturation voltage IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA 0.2 V 0.5 VBE(sat)(1) Base-emitter saturation voltage IC = 150 mA, IB = 15 mA 1.1 V IC = 10 mA, VCE = 10 V [45] [hFE](1) Post irradiation gain calculation (2) IC = 150 mA, VCE = 10 V [50] 300 IC= 500 mA, VCE= 10 V [25] 1. Pulsed duration = 300 μs, duty cycle ≥ 2 % 2. The post-irradiation gain calculation of [hFE], made using hFE measurements from prior to and on completion of irradiation testing and after each annealing step if any, shall be as specified in MILSTD-750 method 1019. DS6085 - Rev 15 page 4/15 2N3700HR Electrical characteristics (curves) 2.2 Electrical characteristics (curves) Figure 1. DC current gain (VCE = 1 V) hFE VCE=1 V 110 °C 25 °C 100 -45 °C Figure 2. DC current gain .


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