Document
2N3700HR
Datasheet
Rad-Hard 80 V, 1 A NPN transistor
3
1 2
LCC-3
3 4
1 2
UB
Pin 4 in UB is connected to the metallic lid.
C (3)
(2) B
E (1)
DS10450
Product status link 2N3700HR
Note:
Features
VCEO
IC(max.)
80 V
1A
• Hermetic packages • ESCC qualified • 100 krad
hFE at 10 V, 150 mA > 100
Tj(max.) 200 °C
Description
The 2N3700HR is a bipolar transistor able to operate under severe environment conditions and radiation exposure providing high immunity to total ionizing dose (TID).
Qualified as per ESCC 5201/004 specification and available in LCC-3 and UB hermetic packages, it is specifically recommended for space and harsh environment applications and suitable for low current and high precision circuits such preamplifiers, oscillators, current mirror configuration.
In case of discrepancies between this datasheet and the relevant agency specification, the latter takes precedence.
Product summary
Part-number
2N3700RUBx 2N3700UBx SOC3700RHRx SOC3700HRx
Product summary ESCC
specification
5201/004
See Table 7 for ordering information.
Package
UB UB LCC-3 LCC-3
Radiation level
100 krad -
100 krad -
DS6085 - Rev 15 - January 2022 For further information contact your local STMicroelectronics sales office.
www.st.com
1
Electrical ratings
Table 1. Absolute maximum ratings
Symbol VCBO VCEO VEBO IC
Collector-base voltage (IE = 0) Collector-emitter voltage (IB = 0) Emitter-base voltage (IC = 0) Collector current
Parameter
PTOT
Total dissipation at Tamb ≤ 25 °C
TOP
Operating temperature range
TJ
Max. operating junction temperature
1. When mounted on a 15 x 15 x 0.6 mm ceramic substrate.
LCC-3 and UB LCC-3 and UB(1)
Table 2. Thermal data
Symbol
Parameter
RthJA
Thermal resistance junction-ambient (max)
1. When mounted on a 15 x 15 x 0.6 mm ceramic substrate.
2N3700HR
Electrical ratings
Value
Unit
140
V
80
V
7
V
1
A
0.5 W
0.76
-65 to 200
°C
200
°C
LCC-3 and UB Value
350
230(1)
Unit °C/W
DS6085 - Rev 15
page 2/15
2N3700HR
Electrical characteristics
2
Electrical characteristics
Table 3. Electrical characteristics (Tamb = 25 °C unless otherwise specified)
Symbol ICBO IEBO
V(BR)CBO
V(BR)CEO (1)
V(BR)EBO
VCE(sat) (1) VBE(sat) (1)
hFE (1)
hfe Cobo Cibo
Parameter
Test conditions
Collector-base cut-off current (IE = 0)
VCB = 90 V VCB = 90 V, Tamb = 150 °C
Emitter cut-off current (IC = 0) VEB = 5 V
Collector-base breakdown voltage
(IE = 0)
IC = 100 µA
Collector-emitter breakdown voltage
(IB = 0)
IC = 30 mA
Emitter-base breakdown voltage
(IC = 0)
IE = 100 µA
Collector-emitter saturation voltage
IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA
Base-emitter saturation voltage
IC = 150 mA, IB = 15 mA
IC = 10 mA, VCE = 10 V
DC current gain
IC = 150 mA, VCE = 10 V IC = 500 mA, VCE = 10 V
IC = 150 mA, VCE = 10 V, Tamb = -55 °C
Small signal current gain
IC = 50 mA, f = 20 MHz, VCE = 10 V
Output capacitance (IE = 0) f = 1 MHz, VCB = 10 V
Intput capacitance (IC = 0)
f = 1 MHz, VEB = 0.5 V
Min.
Max. 10 10 10
140
80
7
0.2 0.5
1.1
90
100
300
50
40
5
12
60
1. Pulsed duration = 300 µs, duty cycle > 2%
Unit nA µA nA V V V V V
pF pF
DS6085 - Rev 15
page 3/15
2.1
2N3700HR
Radiation assurance
Radiation assurance
Radiation test are guaranteed in compliance with ESCC 22900 and ESCC 5201/004 specifications. Each lot is tested in radiation according to the following procedure: • Standard dose rate window (typical at 0.1 rad / sec.) • Test of 11 samples (5 biased at 80% of BVceo, 5 unbiased and 1 for reference) • Acceptance criteria in compliance with the post radiation electrical characteristics as per Table 4.
Table 4. ESCC 5201/004 post radiation electrical characteristics (Tamb = 25 °C unless otherwise specified)
Symbol
Parameter
Test conditions
Min. Max Unit
ICBO
Collector cut-off current (IE = 0)
VCB = 90 V
10 nA
IEBO
Emitter cut-off current (IC = 0)
VEB = 5 V
10 nA
V(BR)CBO
Collector-base breakdown voltage (IE= 0)
IC = 100 μA
140
V
V(BR)CEO(1)
Collector-emitter breakdown voltage (IB = 0) IC = 30 mA
80
V
V(BR)EBO
Emitter-base breakdown voltage (IC= 0)
IE = 100 μA
7
V
VCE(sat)(1)
Collector-emitter saturation voltage
IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA
0.2
V
0.5
VBE(sat)(1)
Base-emitter saturation voltage
IC = 150 mA, IB = 15 mA
1.1
V
IC = 10 mA, VCE = 10 V
[45]
[hFE](1)
Post irradiation gain calculation (2)
IC = 150 mA, VCE = 10 V
[50]
300
IC= 500 mA, VCE= 10 V
[25]
1. Pulsed duration = 300 μs, duty cycle ≥ 2 %
2. The post-irradiation gain calculation of [hFE], made using hFE measurements from prior to and on completion of irradiation testing and after each annealing step if any, shall be as specified in MILSTD-750 method 1019.
DS6085 - Rev 15
page 4/15
2N3700HR
Electrical characteristics (curves)
2.2
Electrical characteristics (curves)
Figure 1. DC current gain (VCE = 1 V)
hFE
VCE=1 V
110 °C
25 °C
100
-45 °C
Figure 2. DC current gain .