N-channel Power MOSFET
STRH100N6
Datasheet
Rad-Hard 60 V, 40 A, N-channel Power MOSFET
1
2
3
TO-254AA
D(1)
Features
VDS
ID
60 V
40 A
...
Description
STRH100N6
Datasheet
Rad-Hard 60 V, 40 A, N-channel Power MOSFET
1
2
3
TO-254AA
D(1)
Features
VDS
ID
60 V
40 A
Fast switching 100% avalanche tested Hermetic package 50 krad TID SEE radiation hardened
RDS(on) typ. 12 mΩ
Qg 134.4 nC
G(3) S(2)
Product status link STRH100N6
SC30150
Description
The STRH100N6 is an N-channel Power MOSFET able to operate under severe environment conditions and radiation exposure. It provides high reliability performance and immunity to the total ionizing dose (TID) and single event effects (SEE).
Qualified as per ESCC detail specification No. 5205/022 and available in a TO-254AA hermetic package it is specifically recommended for space and harsh environment applications and suitable for in-Satellite power conversion, motor control, and power switch circuits.
In a case of discrepancies between this datasheet and the relevant agency specification, the latter takes precedence.
Product summary
Part number STRH100N6HY1
STRH100N6HYG
STRH100N6HYT
Product summary
Quality level
ESCC part number
Package
Engineering model
Flight model
5205/022 TO-254AA
Flight model
Lead finish Gold
Solder dip
Radiation level -
50 krad
Note:
See Ordering information for ordering information.
DS7071 - Rev 11 - July 2022 For further information contact your local STMicroelectronics sales office.
www.st.com
STRH100N6
Electrical ratings
1
Electrical ratings
TC = 25 °C unless otherwise specified.
Table 1. Absolute maximum ratings (pre-ir...
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