N-channel Power MOSFET
STRH40N6
Datasheet
Rad-Hard 60 V, 30 A, N-channel Power MOSFET
2 1
3
SMD.5
D(3)
G(1)
S(2)
SC3015C
Product status l...
Description
STRH40N6
Datasheet
Rad-Hard 60 V, 30 A, N-channel Power MOSFET
2 1
3
SMD.5
D(3)
G(1)
S(2)
SC3015C
Product status link STRH40N6
Features
VDS 60 V
ID 30 A
RDS(on) typ. 36 mΩ
Qg 43 nC
Fast switching 100 % avalanche tested Hermetic package 50 krad TID SEE radiation hardened
Description
The STRH40N6 is a N-channel Power MOSFET able to operate under severe environment conditions and radiation exposure. It provides high reliability performance and immunity to the total ionizing dose (TID) and single event effects (SEE).
Qualified as per ESCC detail specification No. 5205/024 and available in SMD.5 hermetic package it is specifically recommended for space and harsh environment applications and suitable for in-Satellite power conversion, motor control and power switch circuits.
In case of discrepancies between this datasheet and the relevant agency specification, the latter takes precedence.
Device summary
Product summary
Part numbers
STRH40N6S1 STRH40N6SG STRH40N6ST
Quality level
Engineering model ESCC flight
ESCC Part number
5205/024
Package SMD.5
Note:
See Table 8 for ordering information.
Lead finish
Gold Solder-dip
Radiation level
-
50 krad
DS7070 - Rev 14 - February 2024 For further information contact your local STMicroelectronics sales office.
www.st.com
1
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
VDS(1)
Drain-source voltage (VGS = 0)
VGS(2)
Gate-source voltage
Drain current (continuous)
ID
Drain curre...
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