STRH40N6

STRH40N6 Datasheet Rad-Hard 60 V, 30 A, N-channel Power MOSFET 2 1 3 SMD.5 D(3) G(1) S(2) SC3015C Product status link STRH40N6 Features VDS 60 V ID 30 A RDS(on) typ. 36 mΩ Qg 43 nC Fast switching 100 % avalanche tested Hermetic package 50 krad TID SEE radiation hardened Description The STRH40N6 is a N-channel Power MOSFET able to operate under severe environment conditions and radiation exposure. It provides high reliability performance and immunity to the total ionizing dose (TID) and single event effects (SEE). Qualified as per ESCC detail specification No. 5205/024 and available in SMD.5 hermetic package it is specifically recommended for space and harsh environment applications and suitable for in-Satellite power conversion, motor control and power switch circuits. In case of discrepancies between this datasheet and the relevant agency specification, the latter takes precedence. Device summary Product summary Part numbers STRH40N6S1 STRH40N6SG STRH40N6ST Quality level Engineering model ESCC flight ESCC Part number 5205/024 Package SMD.5 Note: See Table 8 for ordering information. Lead finish Gold Solder-dip Radiation level - 50 krad DS7070 - Rev 14 - February 2024 For further information contact your local STMicroelectronics sales office. www.st.com 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VDS(1) Drain-source voltage (VGS = 0) VGS(2) Gate-source voltage Drain current (continuous) ID Drain curre...