STRH40P10

STRH40P10 Datasheet Rad-Hard 100 V, 34 A P-channel Power MOSFET 1 2 3 TO-254AA D(1) G(3) S(2) SCO6140p Product status link STRH40P10 Features VDS 100 V ID 34 A Fast switching 100% avalanche tested Hermetic package 100 krad SEE radiation hardened RDS(on) typ. 60 mΩ Qg 162 nC Description The STRH40P10 is a P-channel Power MOSFET developed with the Rad-Hard STripFET technology in TO-254AA hermetic package and qualified as per ESCC detail specification No. 5205/025. Designed for satellite application, it sustains high level of total ionized dose (TID) and immunity to heavy ions effects. In case of discrepancies between this datasheet and the relevant agency specification, the latter takes precedence. Product summary Part number STRH40P10HY1 STRH40P10HYG STRH40P10HYT Product summary Quality level ESCC part number Package Engineering - model ESCC flight 5205/025 TO-254AA Note: See Table 8. Ordering information. Lead finish Gold Solder dip Radiation level - 100 krad 100 krad DS7072 - Rev 17 - June 2021 For further information contact your local STMicroelectronics sales office. www.st.com 1 Note: STRH40P10 Electrical ratings Electrical ratings For P-channel MOSFET voltage and current polarity is reversed. Table 1. Absolute maximum ratings Symbol Parameter VDS(1) Drain-source voltage (VGS = 0) VGS(2) Gate-source voltage Drain current (continuous) at Tcase = 25 °C ID(3) Drain current (continuous) at Tcase = 100 °C IDM(4) Drain cur...