STRH8N10

STRH8N10 Datasheet Rad-Hard 100 V, 6 A, N-channel Power MOSFET 2 1 3 SMD.5 D(3) G(1) S(2) SC3015C Product status link STRH8N10 Features VDS 100 V ID RDS(on) typ. Qgtyp. 6A 0.27 Ω 18.5 nC Fast switching 100 % avalanche tested Hermetic package 50 krad TID SEE radiation hardened Description The STRH8N10 is a N-channel Power MOSFET able to operate under severe environment conditions and radiation exposure. It provides high reliability performance and immunity to the total ionizing dose (TID) and single event effects (SEE). Qualified as per ESCC detail specification No. 5205/023 and available in SMD.5 hermetic package it is specifically recommended for space and harsh environment applications and suitable for in-Satellite power conversion, motor control and power switch circuits. In case of discrepancies between this datasheet and the relevant agency specification, the latter takes precedence. Device summary Product summary Part numbers STRH8N10S1 STRH8N10SG STRH8N10ST Quality level Engineering model ESCC flight ESCC Part number 5205/023 Package SMD.5 Note: See Table 8 for ordering information. Lead finish Gold Solder-dip Radiation level - 50 krad DS7120 - Rev 11 - January 2024 For further information contact your local STMicroelectronics sales office. www.st.com STRH8N10 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VDS(1) Drain-source voltage (VGS = 0) VGS(2) Gate-source voltage ID(3) ...