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PRELIMINARY
< HVIC >
M81738FP
1200V HIGH VOLTAGE HALF BRIDGE DRIVER
DESCRIPTION M81738FP is 1200V high voltage Power MOSFET and IGBT module driver for half bridge applications. FEATURES ●Floating supply voltage up to 1200V ● Low quiescent power supply current ● Separate sink and source current output up to ±1A (typ) ● Active Miller effect clamp NMOS with sink current up to 1A (typ) ● Input noise filters (HIN,LIN,FO_RST,FO) ● Over-current detection and output shutdown ● High side under voltage lockout ● FO pin which can input and output Fault signals to communicate with controllers and synchronize the shut down with other phases ● Active clamp (power supply surge clamp) ● 24pin SSOP-Lead package APPLICATIONS Power MOSFET and IGBT gate driver for Inverter or general purpose. BLOCK DIAGRAM
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PIN CONFIGURATION (TOP VIEW)
NC NC VB HPOUT HNOUT1 HNOUT2 VS NC NC NC NC NC
NC HIN LIN FO_RST CIN GND FO VCC LPOUT LNOUT1 LNOUT2 VNO
Outline:24P2Q
VB
Active Clamp Active Clamp HV Levelshift UV+POR
HPOUT
VregVCC Levelshift Logic Filter
HNOUT HNOU
GND
VS HIN
Interlock Noise Filter Delay Oneshot Pulse
VCC Vreg
Vreg
VC C
Vreg1
LIN
Delay POR VregVCC Levelshift
LPOU LNOU LNOU
CIN
Vreg1
Filter
Protection Logic
V NO
VregVCC Levelshift
FO_RST
Filter
Filter
FO
Publication Date : Jan 2012
1
Datasheet pdf - http://www.DataSheet4U.co.kr/
PRELIMINARY
M81738FP
1200V HIGH VOLTAGE HALF BRIDGE DRIVER
ABSOLUTE MAXIMUM RATINGS Absolute maximum ratings indicate limitation beyond which destruction of device may occur. All voltage parameters are absolute voltage reference to GND unless otherwise specified. Symbol VB VS VBS VHO VCC VNO VLO VIN VFO VCIN dVS/dt Pd K Rth(j-a) Tj Topr Tstg Parameter High side floating supply absolute voltage High side floating supply offset voltage High side floating supply voltage High side output voltage Low side fixed supply voltage Power ground Low side output voltage Logic input voltage FO input/output voltage CIN input voltage Allowable offset voltage slew rate Package power dissipation Linear derating factor Junction-ambient air thermal resistance Junction temperature Operation temperature Storage temperature Test conditions Raitings -0.5~1224 VB -24~VB +0.5 -0.5~24 VS -0.5~VB +0.5 -0.5~24 VCC -24~VCC +0.5 VNO -0.5~VCC +0.5 -0.5~VCC +0.5 -0.5~VCC +0.5 -0.5~VCC +0.5 ±50 ~1.11 ~11.1 ~90 -40~125 -40~100 -40~150 Unit V V V V V V V V V V V/ns W mW/°C °C/W ℃ ℃ ℃
VBS=VB-VS
HIN, LIN, FO_RST
VS -GND Ta= 25°C ,On our standard PCB Ta≧25°C ,On our standard PCB On our standard PCB
RECOMMENDED OPERATING CONDITIONS For proper operation the device should be used within the recommended conditions. All voltage parameters are absolute voltages referenced to GND unless otherwise specified. Symbol VB VS VBS VHO VCC VNO VLO VIN VFO VCIN Parameter High side floating supply absolute voltage High side floating supply offset voltage High side floating supply voltage High side output voltage Low side fixed supply voltage Power ground Low side output voltage Logic input voltage FO input/output voltage CIN input voltage Test conditions VBS> 13.5V VBS=VB-VS
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Min.
VS+13.5
Limits Typ.
VS+15
Max.
VS+20
Unit V V V V V V V V V V
HIN, LIN, FO_RST
-5 13.5 VS 13.5 -0.5 VNO 0 0 0
15 15 -
900 20 VS+20 20 5 VCC VCC VCC 5
THERMAL DERATING FACTOR CHARACTERISTIC
1.2 Package Power Dissipation Pd (W) 1 0.8 0.6 0.4 0.2 0 0 25 50 75 100 125 150 Ambience Temperature (℃)
Publication Date : Jan 2012
2
Datasheet pdf - http://www.DataSheet4U.co.kr/
PRELIMINARY
M81738FP
1200V HIGH VOLTAGE HALF BRIDGE DRIVER
TYPICAL CONNECTION
Rboot Dboot
DC+
VCC 15V HIN LIN FO_RST
VB HPOUT HNOUT1 HNOUT2
RGON
HOUT
RGOFF Cboot
MCU/DSP Controller
5V~15V RFO
M81019FP M81738FP
FO
VS
Vout
DC BUS Voltage
Other Phases CFO
RGON LPOUT GND CIN LNOUT1 LNOUT2 VNO
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LOUT
RGOFF
RCIN CCIN
Rshunt
DC-
Note: If HVIC is working in high noise environment, it is recommended to connect a 1nF ceramic capacitor (CFO) to FO pin.
Publication Date : Jan 2012
3
Datasheet pdf - http://www.DataSheet4U.co.kr/
PRELIMINARY
M81738FP
1200V HIGH VOLTAGE HALF BRIDGE DRIVER
ELECTRICAL CHARACTERISTICS (Ta=25 °C,VCC=VBS(=VB-VS)=15V, unless otherwise specified) Symbol
IFS IBS ICC VOH VOL VIH VIL IIH IIL
Parameter
High side leakage current VBS quiescent supply current VCC quiescent supply current High level output voltage Low level output voltage High level input threshold voltage Low level input threshold voltage High level input bias current Low level input bias current
Test conditions
VB = VS = 1200V HIN = LIN = 0V HIN = LIN = 0V IO = 0A, HPOUT, LPOUT IO = 0A, HNOUT1, LNOUT1 HIN, LIN, FO_RST HIN, LIN, FO_RST VIN = 5V VIN = 0V HIN on-pulse HIN off-pulse LIN on-pulse LIN off-pulse FO_RST on-pulse FO off-pulse
Min.
14.5 2.2 0.6 0.6 0.00 80 80 80 80 80 80 2.0 6.0 2.2 0.6 10.0 10.5
Limits Typ.
0.5 1.0 3.0 1.5 1.0 0.00 200 200 200 200 200 200 3.4 7.6 400 3.0 1.5 10.8 11.3 0.5 8 0.5.