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MITSUBISHI SEMICONDUCTORS
M81721FP
600V HIGH VOLTAGE HALF BRIDGE DRIVER
DESCRIPTION M81721FP is high voltage Power MOSFET and IGBT gate driver for half bridge applications. FEATURES ¡Floating supply voltage up to 600V ¡Low quiescent power supply current ¡Separate sink and source current output up to ±1A (typ) ¡Active Miller effect clamp NMOS with sink current up to –1A (typ) ¡Input noise filters ¡Over-current detection and output shutdown ¡High side under voltage lockout ¡FO pin which can input and output Fault signals to communicate with controllers and synchronize the shut down with other phases ¡24-Lead SSOP PACKAGE
PIN CONFIGURATION (TOP VIEW)
24
NC NC VB HPOUT HNOUT1 HNOUT2 VS NC NC NC NC NC
NC HIN LIN FO_RST CIN GND FO VCC LPOUT LNOUT1 LNOUT2 VNO
1 12
13
APPLICATIONS Power MOSFET and IGBT gate driver for Medium and Micro inverter or general purpose.
Outline: 24P2Q
BLOCK DIAGRAM
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VB GND UV HPOUT HNOUT1 HNOUT2
Logic Filter
VS
VCC Vreg
HIN Interlock & Noise Filter LIN
Pulse Generator
VREG
Vref
VCC
CIN
Vref
+ –
Protection Logic
LPOUT LNOUT1 LNOUT2
VNO Filter FO
FO_RST
Filter
Aug. 2009 1
Datasheet pdf - http://www.DataSheet4U.co.kr/
MITSUBISHI SEMICONDUCTORS
M81721FP
600V HIGH VOLTAGE HALF BRIDGE DRIVER
ABSOLUTE MAXIMUM RATINGS Absolute maximum ratings indicate limitation beyond which destruction of device may occur. All voltage parameters are absolute voltage reference to GND unless otherwise specified.
Symbol VB VS VBS VHO VCC VNO VLO VIN VFO VCIN dVS/dt Pd Kq Rth(j-c) Tj Topr Tstg Parameter High side floating supply absolute voltage High side floating supply offset voltage High side floating supply voltage High side output voltage Low side fixed supply voltage Power ground Low side output voltage Logic input voltage FO input/output voltage CIN input voltage Allowable offset voltage slew rate Package power dissipation Linear derating factor Junction-case thermal resistance Junction temperature Operation temperature Storage temperature Test conditions Ratings –0.5 ~ 624 VB–24 ~ VB+0.5 –0.5 ~ 24 VS–0.5 ~ VB+0.5 –0.5 ~ 24 VCC–24 ~ VCC+0.5 VNO–0.5 ~ VCC+0.5 –0.5 ~ VCC+0.5 –0.5 ~ VCC+0.5 –0.5 ~ VCC+0.5 ±50 ~ 1.25 ~ 12.5 ~ 80 –40 ~ 125 –40 ~ 100 –40 ~ 125 Unit V V V V V V V V V V V/ns W mW/°C °C/W °C °C °C
VBS = VB–VS
HIN, LIN, FO_RST
Ta = 25°C, On PCB Ta > 25°C, On PCB
RECOMMENDED OPERATING CONDITIONS For proper operation the device should be used within the recommended conditions. All voltage parameters are absolute voltages referenced to GND unless otherwise specified.
Symbol VB VS VBS VHO VCC VNO VLO VIN VFO VCIN Parameter High side floating supply absolute voltage High side floating supply offset voltage High side floating supply voltage High side output voltage Low side fixed supply voltage Power ground Low side output voltage Logic input voltage FO input/output voltage CIN input voltage HIN, LIN, FO_RST
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Test conditions
VBS > 13.5V VBS = VB–VS
Min. VS+13.5 –5 13.5 VS 13.5 –0.5 VNO 0 0 0
Limits Typ. VS+15 — 15 — 15 — — — — —
Max. VS+20 500 20 VS+20 20 5 VCC VCC VCC 5
Unit V V V V V V V V V V
Note: For proper operation, the device should be used within the recommend conditions.
THERMAL DERATING FACTOR CHARACTERISTIC
1.4
Package Power Dissipation Pd (W)
1.2 1.0 0.8 0.6 0.4 0.2 0 0 25 50 75 100 125 150
Ambience Temperature (°C)
Aug. 2009 2
Datasheet pdf - http://www.DataSheet4U.co.kr/
MITSUBISHI SEMICONDUCTORS
M81721FP
600V HIGH VOLTAGE HALF BRIDGE DRIVER
TYPICAL CONNECTION
DC+
Rboot Dboot
VCC 15V HIN MCU/DSP Controller 5V~15V LIN FO_RST
VB HPOUT HNOUT1 HNOUT2 RGOFF Cboot VS RGON
HOUT
Vout DC BUS Voltage
RFO Other Phases CFO GND FO
M81721FP
LPOUT LNOUT1 LNOUT2 CIN VNO
RGON
LOUT
RGOFF
Rshunt RCIN
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CCIN
DCNote: If HVIC is working in high noise environment, it is recommended to connect a 1nF ceramic capacitor (CFO) to FO pin.
Aug. 2009 3
Datasheet pdf - http://www.DataSheet4U.co.kr/
MITSUBISHI SEMICONDUCTORS
M81721FP
600V HIGH VOLTAGE HALF BRIDGE DRIVER
ELECTRICAL CHARACTERISTICS (Ta=25°C, VCC=VBS (=VB–VS)=15V, unless otherwise specified)
Symbol IFS IBS ICC VOH VOL VIH VIL IIH IIL tFilter VHNO2 VLNO2 tVNO2 VOLFO VIHFO VILFO VBSuvr VBSuvt VBSuvh tVBSuv VCIN VPOR IOH IOL1 IOL2 ROH ROL1 ROL2 tdLH(HO) tdHL(HO) tdLH(LO) tdHL(LO) tr tf ∆tdLH ∆tdHL Parameter High side leakage current VBS quiescent supply current VCC quiescent supply current High level output voltage Low level output voltage High level input threshold voltage Low level input threshold voltage High level input bias current Low level input bias current Input signals filter time High side active Miller clamp NMOS input threshold voltage Low side active Miller clamp NMOS input threshold voltage Active Miller clamp NMOS filter time Low level FO output voltage High level FO input threshold voltage Low level FO input threshold voltage VBS supply UV reset voltage VBS supply UV trip voltage VBS supply UV hysteres.