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M81721FP Dataheets PDF



Part Number M81721FP
Manufacturers Mitsubishi Electric Semiconductor
Logo Mitsubishi Electric Semiconductor
Description HIGH VOLTAGE HALF BRIDGE DRIVER
Datasheet M81721FP DatasheetM81721FP Datasheet (PDF)

MITSUBISHI SEMICONDUCTORS M81721FP 600V HIGH VOLTAGE HALF BRIDGE DRIVER DESCRIPTION M81721FP is high voltage Power MOSFET and IGBT gate driver for half bridge applications. FEATURES ¡Floating supply voltage up to 600V ¡Low quiescent power supply current ¡Separate sink and source current output up to ±1A (typ) ¡Active Miller effect clamp NMOS with sink current up to –1A (typ) ¡Input noise filters ¡Over-current detection and output shutdown ¡High side under voltage lockout ¡FO pin which ca.

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MITSUBISHI SEMICONDUCTORS M81721FP 600V HIGH VOLTAGE HALF BRIDGE DRIVER DESCRIPTION M81721FP is high voltage Power MOSFET and IGBT gate driver for half bridge applications. FEATURES ¡Floating supply voltage up to 600V ¡Low quiescent power supply current ¡Separate sink and source current output up to ±1A (typ) ¡Active Miller effect clamp NMOS with sink current up to –1A (typ) ¡Input noise filters ¡Over-current detection and output shutdown ¡High side under voltage lockout ¡FO pin which can input and output Fault signals to communicate with controllers and synchronize the shut down with other phases ¡24-Lead SSOP PACKAGE PIN CONFIGURATION (TOP VIEW) 24 NC NC VB HPOUT HNOUT1 HNOUT2 VS NC NC NC NC NC NC HIN LIN FO_RST CIN GND FO VCC LPOUT LNOUT1 LNOUT2 VNO 1 12 13 APPLICATIONS Power MOSFET and IGBT gate driver for Medium and Micro inverter or general purpose. Outline: 24P2Q BLOCK DIAGRAM www.DataSheet.net/ VB GND UV HPOUT HNOUT1 HNOUT2 Logic Filter VS VCC Vreg HIN Interlock & Noise Filter LIN Pulse Generator VREG Vref VCC CIN Vref + – Protection Logic LPOUT LNOUT1 LNOUT2 VNO Filter FO FO_RST Filter Aug. 2009 1 Datasheet pdf - http://www.DataSheet4U.co.kr/ MITSUBISHI SEMICONDUCTORS M81721FP 600V HIGH VOLTAGE HALF BRIDGE DRIVER ABSOLUTE MAXIMUM RATINGS Absolute maximum ratings indicate limitation beyond which destruction of device may occur. All voltage parameters are absolute voltage reference to GND unless otherwise specified. Symbol VB VS VBS VHO VCC VNO VLO VIN VFO VCIN dVS/dt Pd Kq Rth(j-c) Tj Topr Tstg Parameter High side floating supply absolute voltage High side floating supply offset voltage High side floating supply voltage High side output voltage Low side fixed supply voltage Power ground Low side output voltage Logic input voltage FO input/output voltage CIN input voltage Allowable offset voltage slew rate Package power dissipation Linear derating factor Junction-case thermal resistance Junction temperature Operation temperature Storage temperature Test conditions Ratings –0.5 ~ 624 VB–24 ~ VB+0.5 –0.5 ~ 24 VS–0.5 ~ VB+0.5 –0.5 ~ 24 VCC–24 ~ VCC+0.5 VNO–0.5 ~ VCC+0.5 –0.5 ~ VCC+0.5 –0.5 ~ VCC+0.5 –0.5 ~ VCC+0.5 ±50 ~ 1.25 ~ 12.5 ~ 80 –40 ~ 125 –40 ~ 100 –40 ~ 125 Unit V V V V V V V V V V V/ns W mW/°C °C/W °C °C °C VBS = VB–VS HIN, LIN, FO_RST Ta = 25°C, On PCB Ta > 25°C, On PCB RECOMMENDED OPERATING CONDITIONS For proper operation the device should be used within the recommended conditions. All voltage parameters are absolute voltages referenced to GND unless otherwise specified. Symbol VB VS VBS VHO VCC VNO VLO VIN VFO VCIN Parameter High side floating supply absolute voltage High side floating supply offset voltage High side floating supply voltage High side output voltage Low side fixed supply voltage Power ground Low side output voltage Logic input voltage FO input/output voltage CIN input voltage HIN, LIN, FO_RST www.DataSheet.net/ Test conditions VBS > 13.5V VBS = VB–VS Min. VS+13.5 –5 13.5 VS 13.5 –0.5 VNO 0 0 0 Limits Typ. VS+15 — 15 — 15 — — — — — Max. VS+20 500 20 VS+20 20 5 VCC VCC VCC 5 Unit V V V V V V V V V V Note: For proper operation, the device should be used within the recommend conditions. THERMAL DERATING FACTOR CHARACTERISTIC 1.4 Package Power Dissipation Pd (W) 1.2 1.0 0.8 0.6 0.4 0.2 0 0 25 50 75 100 125 150 Ambience Temperature (°C) Aug. 2009 2 Datasheet pdf - http://www.DataSheet4U.co.kr/ MITSUBISHI SEMICONDUCTORS M81721FP 600V HIGH VOLTAGE HALF BRIDGE DRIVER TYPICAL CONNECTION DC+ Rboot Dboot VCC 15V HIN MCU/DSP Controller 5V~15V LIN FO_RST VB HPOUT HNOUT1 HNOUT2 RGOFF Cboot VS RGON HOUT Vout DC BUS Voltage RFO Other Phases CFO GND FO M81721FP LPOUT LNOUT1 LNOUT2 CIN VNO RGON LOUT RGOFF Rshunt RCIN www.DataSheet.net/ CCIN DCNote: If HVIC is working in high noise environment, it is recommended to connect a 1nF ceramic capacitor (CFO) to FO pin. Aug. 2009 3 Datasheet pdf - http://www.DataSheet4U.co.kr/ MITSUBISHI SEMICONDUCTORS M81721FP 600V HIGH VOLTAGE HALF BRIDGE DRIVER ELECTRICAL CHARACTERISTICS (Ta=25°C, VCC=VBS (=VB–VS)=15V, unless otherwise specified) Symbol IFS IBS ICC VOH VOL VIH VIL IIH IIL tFilter VHNO2 VLNO2 tVNO2 VOLFO VIHFO VILFO VBSuvr VBSuvt VBSuvh tVBSuv VCIN VPOR IOH IOL1 IOL2 ROH ROL1 ROL2 tdLH(HO) tdHL(HO) tdLH(LO) tdHL(LO) tr tf ∆tdLH ∆tdHL Parameter High side leakage current VBS quiescent supply current VCC quiescent supply current High level output voltage Low level output voltage High level input threshold voltage Low level input threshold voltage High level input bias current Low level input bias current Input signals filter time High side active Miller clamp NMOS input threshold voltage Low side active Miller clamp NMOS input threshold voltage Active Miller clamp NMOS filter time Low level FO output voltage High level FO input threshold voltage Low level FO input threshold voltage VBS supply UV reset voltage VBS supply UV trip voltage VBS supply UV hysteres.


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