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M81721FP

Mitsubishi Electric Semiconductor

HIGH VOLTAGE HALF BRIDGE DRIVER

MITSUBISHI SEMICONDUCTORS M81721FP 600V HIGH VOLTAGE HALF BRIDGE DRIVER DESCRIPTION M81721FP is high voltage Pow...


Mitsubishi Electric Semiconductor

M81721FP

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Description
MITSUBISHI SEMICONDUCTORS M81721FP 600V HIGH VOLTAGE HALF BRIDGE DRIVER DESCRIPTION M81721FP is high voltage Power MOSFET and IGBT gate driver for half bridge applications. FEATURES ¡Floating supply voltage up to 600V ¡Low quiescent power supply current ¡Separate sink and source current output up to ±1A (typ) ¡Active Miller effect clamp NMOS with sink current up to –1A (typ) ¡Input noise filters ¡Over-current detection and output shutdown ¡High side under voltage lockout ¡FO pin which can input and output Fault signals to communicate with controllers and synchronize the shut down with other phases ¡24-Lead SSOP PACKAGE PIN CONFIGURATION (TOP VIEW) 24 NC NC VB HPOUT HNOUT1 HNOUT2 VS NC NC NC NC NC NC HIN LIN FO_RST CIN GND FO VCC LPOUT LNOUT1 LNOUT2 VNO 1 12 13 APPLICATIONS Power MOSFET and IGBT gate driver for Medium and Micro inverter or general purpose. Outline: 24P2Q BLOCK DIAGRAM www.DataSheet.net/ VB GND UV HPOUT HNOUT1 HNOUT2 Logic Filter VS VCC Vreg HIN Interlock & Noise Filter LIN Pulse Generator VREG Vref VCC CIN Vref + – Protection Logic LPOUT LNOUT1 LNOUT2 VNO Filter FO FO_RST Filter Aug. 2009 1 Datasheet pdf - http://www.DataSheet4U.co.kr/ MITSUBISHI SEMICONDUCTORS M81721FP 600V HIGH VOLTAGE HALF BRIDGE DRIVER ABSOLUTE MAXIMUM RATINGS Absolute maximum ratings indicate limitation beyond which destruction of device may occur. All voltage parameters are absolute voltage reference to GND unless otherwise specified. Symbol VB...




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