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M81729JFP Dataheets PDF



Part Number M81729JFP
Manufacturers Mitsubishi Electric Semiconductor
Logo Mitsubishi Electric Semiconductor
Description HIGH VOLTAGE HALF BRIDGE DRIVER
Datasheet M81729JFP DatasheetM81729JFP Datasheet (PDF)

< HVIC > M81729JFP HIGH VOLTAGE HALF BRIDGE DRIVER FOR AUTOMOTIVE APPLICATIONS DESCRIPTION M81729JFP is high voltage Power MOSFET and IGBT gate driver for half bridge applications. FEATURES ●Floating Supply Voltage ・・・・・・・600V ●Output Current ・・・・・・・・・・・・・・・+120mA/-250mA (min) ●Half Bridge Driver ●SOP-8 Package APPLICATIONS MOSFET and IGBT gate driver. PIN CONFIGURATION (TOP VIEW) 1.Vcc 2.HIN 3.LIN 4.GND 8.VB 7.HO 6.VS 5.LO Outline:8P2S BLOCK DIAGRAM www.DataSheet.net/ 8 VB VREG HV LEVEL S.

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< HVIC > M81729JFP HIGH VOLTAGE HALF BRIDGE DRIVER FOR AUTOMOTIVE APPLICATIONS DESCRIPTION M81729JFP is high voltage Power MOSFET and IGBT gate driver for half bridge applications. FEATURES ●Floating Supply Voltage ・・・・・・・600V ●Output Current ・・・・・・・・・・・・・・・+120mA/-250mA (min) ●Half Bridge Driver ●SOP-8 Package APPLICATIONS MOSFET and IGBT gate driver. PIN CONFIGURATION (TOP VIEW) 1.Vcc 2.HIN 3.LIN 4.GND 8.VB 7.HO 6.VS 5.LO Outline:8P2S BLOCK DIAGRAM www.DataSheet.net/ 8 VB VREG HV LEVEL SHIFT UV DETECT FILTER RQ INTER R LOCK S HIN 2 FILTER VREG/Vcc LEVEL SHIFT 7 HO PULSE GEN VS 1 Vcc 6 UV DETECT FILTER 5 LO LIN 3 FILTER VREG/Vcc LEVEL SHIFT DELAY 4 GND Publication Date :March 2012 1 Datasheet pdf - http://www.DataSheet4U.co.kr/ M81729JFP HIGH VOLTAGE HALF BRIDGE DRIVER FOR AUTOMOTIVE APPLICATIONS ABSOLUTE MAXIMUM RATINGS (Ta=25°C unless otherwise specified) Symbol Parameter Test conditions Ratings -0.5 ~ 624 VB-24 ~ VB+0.5 -0.5 ~ 24 VS-0.5 ~ VB+0.5 -0.5 ~ 24 -0.5 ~ Vcc+0.5 -0.5 ~ Vcc+0.5 0.6 4.8 50 -40 ~ +150 * -40 ~ +125 -40 ~ +150 255:10s,max 260 Unit V V V V V V V W mW/°C °C/W ℃ ℃ ℃ ℃ VB High Side Floating Supply Absolute Voltage VS High Side Floating Supply Offset Voltage VBS=VB-VS VBS High Side Floating Supply Voltage VHO High Side Output Voltage VCC Low Side Fixed Supply Voltage VLO Low Side Output Voltage HIN,LIN VIN Logic Input Voltage Ta= 25 °C ,On Board PD Package Power Dissipation Ta> 25 °C ,On Board Kθ Linear Derating Factor Rth(j-c) Junction-Case Thermal Resistance Tj Junction Temperature Topr Operation Temperature Tstg Storage Temperature RoHS Correspondence TL Solder Heatproof *When temperature exceeds 125 ℃, please make VS voltage less than 500V. RECOMMENDED OPERATING CONDITIONS Symbol VB VS VBS VHO VCC VLO VIN Parameter High Side Floating Supply Absolute Voltage High Side Floating Supply Offset Voltage High Side Floating Supply Voltage High Side Output Voltage Low Side Fixed Supply Voltage Low Side Output Voltage Logic Input Voltage Tj≦ 125 ℃ Tj> 125 ℃ VBS=VB-VS www.DataSheet.net/ Test conditions HIN,LIN Min. VS+10 0 0 10 VS 10 0 0 Limits Typ. — — — — — — — — Max. VS+20 550 500 20 VB 20 VCC 7 Unit V V V V V V V V * For proper operation, the device should be used within the recommended conditions THERMAL DERATING FACTOR CHARACTERISTIC (MAXIMUM RATING) Package Power Dissipation Pd (W) 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 25 50 75 100 125 150 Temperature Ta(oC) Publication Date : March 2012 2 Datasheet pdf - http://www.DataSheet4U.co.kr/ M81729JFP HIGH VOLTAGE HALF BRIDGE DRIVER FOR AUTOMOTIVE APPLICATIONS ELECTRICAL CHARACTERISTICS (Ta=-40~125°C,VCC=VBS(=VB-VS)=15V, unless otherwise specified) Symbol IFS IBS ICC VOH VOL VIH VIL IIH IIL VBSuvr VBSuvt VBSuvh tVBSuv VCCuvr VCCuvt VCCuvh tVCCuv IOH IOL ROH ROL tdLH(HO) tdHL(HO) trH tfH tdLH(LO) tdHL(LO) trL tfL ⊿tdLH ⊿tdHL tinon tinoff ⊿ PW IO Parameter Floating Supply Leakage Current VBS Standby Current VCC Standby Current High Level Output Voltage Low Level Output Voltage High Level Input Threshold Voltage Low Level Input Threshold Voltage High Level Input Bias Current Low Level Input Bias Current VBS Supply UV Reset Voltage VBS Supply UV Trip Voltage VBS Supply UV Hysteresis Voltage VBS Supply UV Filter Time VCC Supply UV Reset Voltage VCC Supply UV Trip Voltage VCC Supply UV Hysteresis Voltage VCC Supply UV Filter Time Output High Level Short Circuit Pulsed Current Output Low Level Short Circuit Pulsed Current Output High Level On Resistance Output Low Level On Resistance High Side Turn-On Propagation Delay High Side Turn-Off Propagation Delay High Side Turn-On Rise Time High Side Turn-Off Fall Time Low Side Turn-On Propagation Delay Low Side Turn-Off Propagation Delay Low Side Turn-On Rise Time Low Side Turn-Off Fall Time Turn-On Propagation Delay Matching Turn-Off Propagation Delay Matching On Input Filter Time Off Input Filter Time Difference of Input Pulse Width and Output Pulse Width Test conditions VB = VS = 600V HIN= LIN= 0V HIN= LIN= 0V IO = -20mA, LO, HO IO = 20mA, LO, HO Min. — — 0.2 13.6 — 2.7 — — — 8.0 7.4 0.5 — 8.0 7.4 0.5 — 120 250 — — — — — — — — — — — — — — — — — — 150 250 150 250 — Limits Typ.* — 0.2 0.6 14.2 0.3 — — 25 — 8.9 8.2 0.7 7.5 8.9 8.2 0.7 7.5 200 350 40 15 450 550 450 550 130 50 450 550 450 550 130 50 0 0 0 0 250 350 250 350 — Max. 1.0 0.5 1.0 — 0.6 — 0.8 100 2 9.8 9.0 — — 9.8 9.0 — — — — 70 30 650 750 650 750 220 80 650 750 650 750 220 80 30 40 30 40 350 450 350 450 100 Unit A mA mA V V V V A A V V V s V V V s mA mA Ω Ω ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns VIN = 5V VIN = 0V VO = 0V, VIN = 5V, PW < 10s** VO = 15V, VIN = 0V, PW < 10s ** (Tj≦ 125 ℃) IO = -20mA, ROH = ( VCC – VO )/ IO IO = 20mA, ROL = VO / IO CL = 1000pF between HO-VS, 25 ℃ CL = 1000pF between HO-VS CL = 1000pF between HO-VS, 25 ℃ CL = 1000pF between HO-VS CL = 1000pF between HO-VS CL = 1000pF between HO-VS CL = 1000pF between LO-GND, 25 ℃ CL = 1000pF between LO-GND C.


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