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M81712FP Dataheets PDF



Part Number M81712FP
Manufacturers Mitsubishi Electric Semiconductor
Logo Mitsubishi Electric Semiconductor
Description HIGH VOLTAGE HALF BRIDGE DRIVER
Datasheet M81712FP DatasheetM81712FP Datasheet (PDF)

MITSUBISHI SEMICONDUCTORS M81712FP HIGH VOLTAGE THREE PHASE BRIDGE DRIVER DESCRIPTION M81712FP is high voltage Power MOSFET and IGBT module driver for THREE PHASE bridge applications. PIN CONFIGURATION (TOP VIEW) FEATURES ¡FLOATING SUPPLY VOLTAGE ... 600V ¡OUTPUT CURRENT ... +200mA/-500mA (typ) ¡THREE PHASE BRIDGE DRIVER ¡28Pin SSOP PACKAGE (Cut Pin Package) DISTANCE BETWEEN HIGHSIDE-PHASE : 3.4mm APPLICATIONS MOSFET and IGBT module in.

  M81712FP   M81712FP


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MITSUBISHI SEMICONDUCTORS M81712FP HIGH VOLTAGE THREE PHASE BRIDGE DRIVER DESCRIPTION M81712FP is high voltage Power MOSFET and IGBT module driver for THREE PHASE bridge applications. PIN CONFIGURATION (TOP VIEW) FEATURES ¡FLOATING SUPPLY VOLTAGE ................................. 600V ¡OUTPUT CURRENT ....................... +200mA/-500mA (typ) ¡THREE PHASE BRIDGE DRIVER ¡28Pin SSOP PACKAGE (Cut Pin Package) DISTANCE BETWEEN HIGHSIDE-PHASE : 3.4mm APPLICATIONS MOSFET and IGBT module inverter driver for refrigerator, air-conditioner, washing machine, AC-servomotor and general purpose. NC:NO CONNECTION Outline 28X9R BLOCK DIAGRAM www.DataSheet.net/ GND 12 VREG UV DETECT FILTER INTER LOCK 28 UFB RQ R S 27 UPO UPIN 3 FILTER VREG/VCC Level Shift PULSE GEN 26 UFS VCC 1 UNIN 6 FILTER VREG/VCC Level Shift DELAY 18 UNO 15 UV DETECT FILTER PGND 25 24 VFB VPO VFS VNO WFB WPO WFS WNO VPIN VNIN 4 7 23 17 21 20 WPIN WNIN 5 8 19 16 Aug. 2009 1 Datasheet pdf - http://www.DataSheet4U.co.kr/ MITSUBISHI SEMICONDUCTORS M81712FP HIGH VOLTAGE THREE PHASE BRIDGE DRIVER ABSOLUTE MAXIMUM RATINGS (Ta=25°C unless otherwise specified) Symbol U,V,WFB U,V,WFS VBS U,V,WPO VCC U,V,WNO U,V,WIN dVS/dt PD Kq Rth(j-c) Tj Topr Tstg Parameter High Side Floating Supply Absolute Voltage High Side Floating Supply Offset Voltage High Side Floating Supply Voltage High Side Output Voltage Low Side Fixed Supply Voltage Low Side Output Voltage Logic Input Voltage Allowable Offset Supply Voltage Transient Package Power Dissipation Linear Derating Factor Junction-Case Thermal Resistance Junction Temperature Operation Temperature Storage Temperature Conditions Ratings –0.5 ~ 624 U,V,WFB-24 ~ U,V,WFB +0.5 –0.5~24 U,V,WFS-0.5 ~ U,V,WFB+0.5 –0.5~24 –0.5~VCC+0.5 –0.5~VCC+0.5 50 1.84 18.4 54.39 –20 ~ 125 –20 ~ 100 –40 ~ 125 Unit V V V V V V V V/ns W mW/°C °C/W °C °C °C VBS = *FB-*FS *PIN, *NIN Terminal Ta = 25°C, On Board Ta > 25°C, On Board RECOMMENDED OPERATING CONDITIONS Symbol U,V,WFB U,V,WFS VBS VCC VIN VPGND Parameter High Side Floating Supply Absolute Voltage High Side Floating Supply Offset Voltage High Side Floating Supply Voltage Low Side Fixed Supply Voltage Logic Input Voltage Power GND Test conditions Min. VS+10 0 VBS = *FB–*FS *PIN, *NIN Terminal www.DataSheet.net/ Limits Typ. — — — — — — Max. VS+20 500 20 20 5 5 Unit V V V V V V 10 10 0 -5 * For proper operation, the device should be used within the recommend conditions. THERMAL DERATING FACTOR CHARACTERISTIC (MAXIMUM RATING) 2.0 Pd (W) 1.5 1.0 0.5 0 0 25 50 75 100 Ta (°C) 125 150 Aug. 2009 2 Datasheet pdf - http://www.DataSheet4U.co.kr/ MITSUBISHI SEMICONDUCTORS M81712FP HIGH VOLTAGE THREE PHASE BRIDGE DRIVER ELECTRICAL CHARACTERISTICS (Ta=25°C, VCC=VBS(=*FB-*FS)=15V unless otherwise specified) Symbol IFS IBS ICC VOH VOL VIH VIL IIH IIL VBSuvr VBSuvh tVBSuv VCCuvr VCCuvh tVCCuv IOH IOL ROH ROL tdLH(HO) tdHL(HO) trH tfH tdLH(LO) tdHL(LO) trL tfL ∆tdLH ∆tdHL tfilter Parameter Floating Supply Leakage Current VBS Standby Current VCC Standby Current High Level Output Voltage Low Level Output Voltage High Level Input Threshold Voltage Low Level Input Threshold Voltage High Level Input Bias Current Low Level Input Bias Current VBS Supply UV Reset Voltage VBS Supply UV Hysteresis Voltage VBS Supply UV Filter Time VCC Supply UV Reset Voltage VCC Supply UV Hysteresis Voltage VCC Supply UV Filter Time Output High Level Short Circuit Pulsed Current Output Low Level Short Circuit Pulsed Current Output High Level On Resistance Output Low Level On Resistance High Side Turn-On Propagation Delay High Side Turn-Off Propagation Delay High Side Turn-On Rise Time High Side Turn-Off Fall Time Low Side Turn-On Propagation Delay Low Side Turn-Off Propagation Delay Low Side Turn-On Rise Time Low Side Turn-Off Fall Time Delay Matching, High Side and Low Side Turn-On Delay Matching, High Side and Low Side Turn-Off Input Filter Time *PO, *NO = 0V, *PIN, *NIN = 5V, PW < 10 µ *PO, *NO = 15V, *PIN, *NIN = 0V, PW < 10 µ IO = 20mA, ROH = (VOH-VO) /20mA IO = 20mA, ROL = VO/20mA CL = 1000pF between *HO-*VS Note.1 CL = 1000pF between *HO-*VS Note.1 www.DataSheet.net/ Test conditions VB = VS = 600V, 1 per phase 1 per phase IO = 0A, *NO, *PO IO = 0A, *NO, *PO *PIN, *NIN *PIN, *NIN *PIN, *NIN = 5V *PIN, *NIN = 0V Limits Min. — — — 14.9 — 2.7 — 0.3 — 7.5 0.2 — 7.5 0.2 — 120 350 — — 340 340 20 — 340 340 20 — — — 260 310 Typ.* — 0.2 1.0 — — — — 0.5 0 8.5 0.5 7.5 8.5 0.5 7.5 200 500 40 15 650 650 130 50 650 650 100 50 — — 380 450 Max. 1.0 0.5 2.0 — 0.1 — 0.8 1.0 — 9.5 0.8 — 9.5 0.8 — — — 70 30 855 855 220 75 855 855 200 75 50 50 500 590 Unit µA mA mA V V V V mA µA V V µs V V µs mA mA Ω Ω ns ns ns ns ns ns ns ns ns ns ns ns CL = 1000pF between *HO-*VS Note.2 CL = 1000pF between *HO-*VS Note.2 CL = 1000pF between *LO-PGND Note.1 CL = 1000pF between *LO-PGND Note.1 CL = 1000pF between *LO-PGND Note.2 CL = 1000pF between *LO-PGND Note.2 |tdLH (*HO) -td.


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