MGF1941AL

< Power GaAs FET > MGF1941AL Micro-X type plastic package DESCRIPTION The MGF1941AL power MES FET is designed for use in S to Ku band power amplifiers. Outline Drawing FEATURES High gain and High P1dB P1dB=15dBm, Glp=10 dB (Typ.) @ f=12GHz APPLICATION S to Ku band low noise amplifiers Fig.1 MITSUBISHI Proprietary Not to be reproduced or disclosed without permission by Mitsubishi Electric QUALITY GRADE GG RECOMMENDED BIAS CONDITIONS VDS=3V , ID=30mA ORDERING INFORMATION Tape & reel 4,000pcs/reel RoHS COMPLIANT MGF1941AL is a RoHS compliant product. RoHS compliance is indicated by the letter “G” after the Lot Marking. ABSOLUTE MAXIMUM RATINGS Symbol VGDO VGSO ID PT Tch Tstg Parameter Gate to drain voltage Gate to source voltage Drain current Total power dissipation Channel temperature Storage temperature (Ta=25C ) www.DataSheet.net/ Ratings -5 -5 120 300 175 -65 to +150 (Ta=25C ) Unit V V mA mW C C ELECTRICAL CHARACTERISTICS Symbol V(BR)GDO IDSS VGS(off) P1dB Glp Gs NFmin Parameter Gate to drain breakdown voltage Saturated drain current Gate to source cut-off voltage Output power at 1dB gain compression Linear power gain Associated gain Minimum noise figure Test conditions MIN. IG=-30A VGS=0V,VDS=3V VDS=3V,ID=300A VDS=3V, ID=30mA, f=12GHz VDS=3V, ID=30mA, f=12GHz, Pin=-5dBm VDS=3V, ID=10mA, f=12GHz -8 35 -0.3 11 7 --- Limits TYP. -15 60 -1.4 15 10 9 1.2 MAX -120 -3.5 ----- Unit V mA V dBm dB dB dB Note : P1B and Glp are tested with sampling inspection. ...