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MGF1941AL Dataheets PDF



Part Number MGF1941AL
Manufacturers Mitsubishi Electric Semiconductor
Logo Mitsubishi Electric Semiconductor
Description Micro-X type plastic package
Datasheet MGF1941AL DatasheetMGF1941AL Datasheet (PDF)

< Power GaAs FET > MGF1941AL Micro-X type plastic package DESCRIPTION The MGF1941AL power MES FET is designed for use in S to Ku band power amplifiers. Outline Drawing FEATURES High gain and High P1dB P1dB=15dBm, Glp=10 dB (Typ.) @ f=12GHz APPLICATION S to Ku band low noise amplifiers Fig.1 MITSUBISHI Proprietary Not to be reproduced or disclosed without permission by Mitsubishi Electric QUALITY GRADE GG RECOMMENDED BIAS CONDITIONS VDS=3V , ID=30mA ORDERING INFORMATION Tape & reel 4,000.

  MGF1941AL   MGF1941AL


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< Power GaAs FET > MGF1941AL Micro-X type plastic package DESCRIPTION The MGF1941AL power MES FET is designed for use in S to Ku band power amplifiers. Outline Drawing FEATURES High gain and High P1dB P1dB=15dBm, Glp=10 dB (Typ.) @ f=12GHz APPLICATION S to Ku band low noise amplifiers Fig.1 MITSUBISHI Proprietary Not to be reproduced or disclosed without permission by Mitsubishi Electric QUALITY GRADE GG RECOMMENDED BIAS CONDITIONS VDS=3V , ID=30mA ORDERING INFORMATION Tape & reel 4,000pcs/reel RoHS COMPLIANT MGF1941AL is a RoHS compliant product. RoHS compliance is indicated by the letter “G” after the Lot Marking. ABSOLUTE MAXIMUM RATINGS Symbol VGDO VGSO ID PT Tch Tstg Parameter Gate to drain voltage Gate to source voltage Drain current Total power dissipation Channel temperature Storage temperature (Ta=25C ) www.DataSheet.net/ Ratings -5 -5 120 300 175 -65 to +150 (Ta=25C ) Unit V V mA mW C C ELECTRICAL CHARACTERISTICS Symbol V(BR)GDO IDSS VGS(off) P1dB Glp Gs NFmin Parameter Gate to drain breakdown voltage Saturated drain current Gate to source cut-off voltage Output power at 1dB gain compression Linear power gain Associated gain Minimum noise figure Test conditions MIN. IG=-30A VGS=0V,VDS=3V VDS=3V,ID=300A VDS=3V, ID=30mA, f=12GHz VDS=3V, ID=30mA, f=12GHz, Pin=-5dBm VDS=3V, ID=10mA, f=12GHz -8 35 -0.3 11 7 --- Limits TYP. -15 60 -1.4 15 10 9 1.2 MAX -120 -3.5 ----- Unit V mA V dBm dB dB dB Note : P1B and Glp are tested with sampling inspection. Gs/NFmin are not tested. Publication Date : Mar., 2012 CSTG-14554 1 Datasheet pdf - http://www.DataSheet4U.co.kr/ < Power GaAs FET > MGF1941AL Micro-X type plastic package Fig.1 3.2±0.1 (0.30) 2.6±0.1 0.5±0.1 (0.30) Bottom (2.3) (0.30) 0.65±0.1 2.6±0.1 3.2±0.1 Top ① ② aAA ③ 2.2±0.1 1.7±0.1 ② (0.30) Unit : mm 0.15±0.05 www.DataSheet.net/ Side 1.35±0.2 ① Gate ② Source ③ Drain (GD-32) Publication Date : Mar., 2012 2 Datasheet pdf - http://www.DataSheet4U.co.kr/ (2.3) J < Power GaAs FET > MGF1941AL Micro-X type plastic package TYPICAL CHARACTERISTICS (Ta=25°C) I D vs. VDS 100 90 80 70 60 50 40 30 20 10 0 0.0 1.0 2.0 3.0 4.0 5.0 Ta=25deg.C VGS=-0.2V/STEP I D vs. VGS 100 90 80 Ta=25deg.C VDS=3V VGS=0V DRAIN CURRENT ID(mA) DRAIN CURRENT ID(mA) 70 60 50 40 30 20 10 0 -3.0 -2.5 -2.0 -1.5 -1.0 -0.5 0.0 DRAIN TO SOURCE VOLTAGE VDS(V) GATE TO SOURCE VOLTAGE VGS(V) Po vs. Pin 4.0 NF , Gs vs. ID 12 20 Ta= 2 5 de g.C VDS = 3 V I D= 3 0 mA f= 1 2 GHz NF(dB) 3.5 10 15 3.0 www.DataSheet.net/ 8 Gs(dB) Po (dBm ) 10 2.5 6 5 2.0 4 f=12GHz Vds=3V Ids=10mA 0 1.5 2 -5 -15 -10 -5 0 5 10 15 1.0 0 10 20 ID(mA) 30 40 50 0 Pin (dBm ) Publication Date : Mar., 2012 3 Datasheet pdf - http://www.DataSheet4U.co.kr/ < Power GaAs FET > MGF1941AL Micro-X type plastic package S PARAMETERS f (GHz) S11 Mag. S21 Mag. S12 Mag. (Conditions:VDS=3V,ID=30mA,Ta=25deg.C) S22 K MAG/MSG Angle Mag. Angle (dB) Angle Angle 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 0.981 0.933 0.862 0.780 0.694 0.610 0.547 0.499 0.480 0.480 0.505 0.548 0.588 0.633 0.670 0.722 0.761 0.788 -20.3 -40.4 -60.6 -81.1 -102.4 -124.3 -149.6 -174.0 162.9 142.0 123.1 106.4 90.2 76.4 62.2 53.0 41.1 30.8 5.081 4.936 4.742 4.509 4.265 3.982 3.689 3.389 3.117 2.904 2.720 2.569 2.393 2.277 2.142 1.968 1.799 1.614 159.6 140.0 120.8 102.2 84.0 66.6 49.0 32.7 17.6 3.5 -10.8 -25.2 -39.4 -53.3 -69.1 -84.2 -98.6 -113.4 0.016 0.031 0.045 0.056 0.066 0.073 0.079 0.083 0.087 0.091 0.098 0.107 0.113 0.122 0.131 0.135 0.140 0.143 www.DataSheet.net/ 78.2 67.1 56.7 47.1 38.0 30.2 22.2 14.8 9.4 5.7 1.6 -3.6 -10.5 -16.3 -24.9 -33.3 -40.8 -49.7 0.567 0.549 0.520 0.482 0.440 0.394 0.340 0.288 0.243 0.209 0.185 0.177 0.176 0.215 0.287 0.354 0.423 0.506 -11.2 -22.2 -32.9 -43.4 -53.8 -63.2 -76.0 -87.7 -100.4 -114.9 -135.0 -162.1 168.8 147.8 125.6 103.6 88.8 74.5 0.21 0.38 0.54 0.70 0.85 1.00 1.12 1.27 1.37 1.43 1.39 1.29 1.24 1.11 1.00 0.90 0.82 0.74 25.0 22.0 20.3 19.1 18.1 17.4 14.6 13.0 11.9 11.1 10.7 10.6 10.3 10.7 11.8 11.6 11.1 10.5 Measurement plane (2.6mm) Recommended foot pattern; RO4003C/Rogers (r=3.38, t=0.508mm) Publication Date : Mar., 2012 4 Datasheet pdf - http://www.DataSheet4U.co.kr/ < Power GaAs FET > MGF1941AL Micro-X type plastic package S PARAMETERS f (GHz) S11 Mag. S21 Mag. S12 Mag. (Conditions:VDS=3V,ID=10mA,Ta=25deg.C) S22 K MAG/MSG Angle Mag. Angle (dB) Angle Angle 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 0.988 0.955 0.907 0.845 0.776 0.698 0.629 0.570 0.535 0.522 0.534 0.568 0.604 0.642 0.673 0.724 0.761 0.787 -17.8 -35.7 -54.0 -73.0 -92.9 -113.8 -138.1 -161.9 174.6 153.1 132.8 114.5 97.1 82.1 67.1 57.1 44.9 34.2 3.647 3.602 3.549 3.478 3.394 3.266 3.101 2.904 2.706 2.535 2.382 2.249 2.091 1.981 1.844 1.685 1.531 1.364 161.6 143.8 125.9 108.0 90.2 72.6 54.1 37.0 21.0 5.8 -9.3 -24.4 -39.2 -53.6 -69.7 -84.9 -99.4 -114.1 0.019 0.038 0.054 0.069 0.081 0.090 0.096 0.098 0.097 0.094 0.095 0.099 0.101 0.107 0.114 0.118 0.122.


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