Document
< Power GaAs FET >
MGF1941AL
Micro-X type plastic package
DESCRIPTION
The MGF1941AL power MES FET is designed for use in S to Ku band power amplifiers.
Outline Drawing
FEATURES
High gain and High P1dB P1dB=15dBm, Glp=10 dB (Typ.) @ f=12GHz
APPLICATION
S to Ku band low noise amplifiers
Fig.1
MITSUBISHI Proprietary
Not to be reproduced or disclosed without permission by Mitsubishi Electric
QUALITY GRADE
GG
RECOMMENDED BIAS CONDITIONS
VDS=3V , ID=30mA
ORDERING INFORMATION
Tape & reel 4,000pcs/reel
RoHS COMPLIANT
MGF1941AL is a RoHS compliant product. RoHS compliance is indicated by the letter “G” after the Lot Marking.
ABSOLUTE MAXIMUM RATINGS
Symbol VGDO VGSO ID PT Tch Tstg Parameter Gate to drain voltage Gate to source voltage Drain current Total power dissipation Channel temperature Storage temperature
(Ta=25C )
www.DataSheet.net/
Ratings -5 -5 120 300 175 -65 to +150
(Ta=25C )
Unit V V mA mW C C
ELECTRICAL CHARACTERISTICS
Symbol V(BR)GDO IDSS VGS(off) P1dB Glp Gs NFmin Parameter Gate to drain breakdown voltage Saturated drain current Gate to source cut-off voltage Output power at 1dB gain compression Linear power gain Associated gain Minimum noise figure
Test conditions MIN. IG=-30A VGS=0V,VDS=3V VDS=3V,ID=300A VDS=3V, ID=30mA, f=12GHz VDS=3V, ID=30mA, f=12GHz, Pin=-5dBm VDS=3V, ID=10mA, f=12GHz -8 35 -0.3 11 7 ---
Limits TYP. -15 60 -1.4 15 10 9 1.2 MAX -120 -3.5 -----
Unit V mA V dBm dB dB dB
Note : P1B and Glp are tested with sampling inspection. Gs/NFmin are not tested.
Publication Date : Mar., 2012 CSTG-14554 1
Datasheet pdf - http://www.DataSheet4U.co.kr/
< Power GaAs FET >
MGF1941AL
Micro-X type plastic package
Fig.1
3.2±0.1 (0.30) 2.6±0.1 0.5±0.1 (0.30)
Bottom
(2.3) (0.30) 0.65±0.1 2.6±0.1 3.2±0.1
Top
①
②
aAA
③
2.2±0.1 1.7±0.1
②
(0.30)
Unit : mm
0.15±0.05
www.DataSheet.net/
Side
1.35±0.2
① Gate ② Source ③ Drain
(GD-32)
Publication Date : Mar., 2012 2
Datasheet pdf - http://www.DataSheet4U.co.kr/
(2.3)
J
< Power GaAs FET >
MGF1941AL
Micro-X type plastic package
TYPICAL CHARACTERISTICS
(Ta=25°C)
I D vs. VDS
100 90 80 70 60 50 40 30 20 10 0 0.0 1.0 2.0 3.0 4.0 5.0 Ta=25deg.C VGS=-0.2V/STEP
I D vs. VGS
100 90 80
Ta=25deg.C VDS=3V
VGS=0V
DRAIN CURRENT ID(mA)
DRAIN CURRENT ID(mA)
70 60 50 40 30 20 10 0 -3.0
-2.5
-2.0
-1.5
-1.0
-0.5
0.0
DRAIN TO SOURCE VOLTAGE VDS(V)
GATE TO SOURCE VOLTAGE VGS(V)
Po vs. Pin
4.0
NF , Gs vs. ID
12
20 Ta= 2 5 de g.C VDS = 3 V I D= 3 0 mA f= 1 2 GHz
NF(dB) 3.5 10
15
3.0
www.DataSheet.net/
8 Gs(dB)
Po (dBm )
10
2.5
6
5
2.0 4 f=12GHz Vds=3V Ids=10mA
0
1.5
2
-5 -15
-10
-5
0
5
10
15
1.0 0 10 20 ID(mA) 30 40 50
0
Pin (dBm )
Publication Date : Mar., 2012 3
Datasheet pdf - http://www.DataSheet4U.co.kr/
< Power GaAs FET >
MGF1941AL
Micro-X type plastic package
S PARAMETERS
f (GHz) S11 Mag. S21 Mag. S12 Mag. (Conditions:VDS=3V,ID=30mA,Ta=25deg.C) S22 K MAG/MSG Angle Mag. Angle (dB)
Angle
Angle
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
0.981 0.933 0.862 0.780 0.694 0.610 0.547 0.499 0.480 0.480 0.505 0.548 0.588 0.633 0.670 0.722 0.761 0.788
-20.3 -40.4 -60.6 -81.1 -102.4 -124.3 -149.6 -174.0 162.9 142.0 123.1 106.4 90.2 76.4 62.2 53.0 41.1 30.8
5.081 4.936 4.742 4.509 4.265 3.982 3.689 3.389 3.117 2.904 2.720 2.569 2.393 2.277 2.142 1.968 1.799 1.614
159.6 140.0 120.8 102.2 84.0 66.6 49.0 32.7 17.6 3.5 -10.8 -25.2 -39.4 -53.3 -69.1 -84.2 -98.6 -113.4
0.016 0.031 0.045 0.056 0.066 0.073 0.079 0.083 0.087 0.091 0.098 0.107 0.113 0.122 0.131 0.135 0.140 0.143
www.DataSheet.net/
78.2 67.1 56.7 47.1 38.0 30.2 22.2 14.8 9.4 5.7 1.6 -3.6 -10.5 -16.3 -24.9 -33.3 -40.8 -49.7
0.567 0.549 0.520 0.482 0.440 0.394 0.340 0.288 0.243 0.209 0.185 0.177 0.176 0.215 0.287 0.354 0.423 0.506
-11.2 -22.2 -32.9 -43.4 -53.8 -63.2 -76.0 -87.7 -100.4 -114.9 -135.0 -162.1 168.8 147.8 125.6 103.6 88.8 74.5
0.21 0.38 0.54 0.70 0.85 1.00 1.12 1.27 1.37 1.43 1.39 1.29 1.24 1.11 1.00 0.90 0.82 0.74
25.0 22.0 20.3 19.1 18.1 17.4 14.6 13.0 11.9 11.1 10.7 10.6 10.3 10.7 11.8 11.6 11.1 10.5
Measurement plane (2.6mm) Recommended foot pattern; RO4003C/Rogers (r=3.38, t=0.508mm)
Publication Date : Mar., 2012 4
Datasheet pdf - http://www.DataSheet4U.co.kr/
< Power GaAs FET >
MGF1941AL
Micro-X type plastic package
S PARAMETERS
f (GHz) S11 Mag. S21 Mag. S12 Mag. (Conditions:VDS=3V,ID=10mA,Ta=25deg.C) S22 K MAG/MSG Angle Mag. Angle (dB)
Angle
Angle
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
0.988 0.955 0.907 0.845 0.776 0.698 0.629 0.570 0.535 0.522 0.534 0.568 0.604 0.642 0.673 0.724 0.761 0.787
-17.8 -35.7 -54.0 -73.0 -92.9 -113.8 -138.1 -161.9 174.6 153.1 132.8 114.5 97.1 82.1 67.1 57.1 44.9 34.2
3.647 3.602 3.549 3.478 3.394 3.266 3.101 2.904 2.706 2.535 2.382 2.249 2.091 1.981 1.844 1.685 1.531 1.364
161.6 143.8 125.9 108.0 90.2 72.6 54.1 37.0 21.0 5.8 -9.3 -24.4 -39.2 -53.6 -69.7 -84.9 -99.4 -114.1
0.019 0.038 0.054 0.069 0.081 0.090 0.096 0.098 0.097 0.094 0.095 0.099 0.101 0.107 0.114 0.118 0.122.