< Low Noise GaAs HEMT >
MGF4921AM
4pin flat lead package
DESCRIPTION
The MGF4921AM super-low noise InGaAs HEMT (High E...
< Low Noise GaAs HEMT >
MGF4921AM
4pin flat lead package
DESCRIPTION
The MGF4921AM super-low noise InGaAs HEMT (High Electron Mobility
Transistor) is designed for use in L to C band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost performance.
Outline Drawing
FEATURES
・Low noise figure NFmin. = 0.35dB (Typ.) @ f=2.4GHz NFmin. = 0.35dB (Typ.) @ f=4GHz ・High associated gain Gs = 18.0dB (Typ.) @ f=2.4GHz Gs = 13.0dB (Typ.) @ f=4GHz
Fig.1
APPLICATION
L to C band low noise amplifiers
MITSUBISHI Proprietary
Not to be reproduced or disclosed without permission by Mitsubishi Electric
QUALITY GRADE
GG
RECOMMENDED BIAS CONDITIONS
VDS=2V , ID=10~25mA
ORDERING INFORMATION
Tape & reel 15000pcs/reel
www.DataSheet.net/
RoHS COMPLIANT
MGF4921AM is a RoHS compliant product. RoHS compliance is indicated by the letter “G” after the Lot Marking.
ABSOLUTE MAXIMUM RATINGS
Symbol VGDO VGSO ID PT Tch Tstg Symbol V(BR)GDO IGSS IDSS VGS(off) Gs NFmin. Gs Parameter Gate to drain voltage Gate to source voltage Drain current Total power dissipation Channel temperature Storage temperature Parameter Gate to drain breakdown voltage Gate to source leakage current Saturated drain current Gate to source cut-off voltage Associated gain Minimum noise figure Associated gain
(Ta=25C )
Ratings -3 -3 IDSS 130 125 -55 to +125
(Ta=25C)
Unit V V mA mW C C Limits MIN. TYP. ----18 0.35 13 0.35 MAX -50 150 -1.5 ---0.55 V A mA V dB dB dB dB -3.5 -30 -0.2 --11.5 -Unit
ELE...