Document
June/2004
MITSUBISHI SEMICONDUCTOR
MGF4931AM
SUPER LOW NOISE InGaAs HEMT (4pin flat lead package)
DESCRIPTION
The MGF4931AM super-low noise HEMT (High Electron Mobility Transistor) is designed for use in S to Ku band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost performance.
Outline Drawing
FEATURES
Low noise figure @ f=12GHz NFmin. = 0.6dB (Typ.) High associated gain @ f=12GHz Gs = 11.5dB (Typ.)
Fig.1
MITSUBISHI Proprietary
APPLICATION
S to Ku band low noise amplifiers
Not to be reproduced or disclosed without permission by Mitsubishi Electric
QUALITY GRADE
GG
RECOMMENDED BIAS CONDITIONS
VDS=2V , ID=7.5mA
ORDERING INFORMATION
Tape & reel 3000pcs./reel
Keep Safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable , but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury , fire or property damage. Remember to give due consideration to safety when making your circuit designs , with appropriate measure such as (I) placement of substitutive , auxiliary circuits , (ii) use of non-flammble material or (iii) prevention against any malfunction or mishap.
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ABSOLUTE MAXIMUM RATINGS
Symbol VGDO VGSO ID PT Tch Tstg Parameter Gate to drain voltage Gate to source voltage Drain current Total power dissipation Channel temperature Storage temperature
(Ta=25°C )
Ratings -4 -4 IDSS 50 125 -55 to +125
(Ta=25°C )
Unit V V mA mW °C °C
ELECTRICAL CHARACTERISTICS
Symbol V(BR)GDO IGSS IDSS VGS(off) Gs NFmin. Parameter
Gate to drain breakdown voltage Gate to source leakage current Saturated drain current Gate to source cut-off voltage Associated gain Minimum noise figure
Test conditions IG=-10µA VGS=-2V,VDS=0V VGS=0V,VDS=2V VDS=2V,ID=500µA VDS=2V, ID=7.5mA,f=12GHz MIN. -3 -10 -0.1 10.0 --
Limits TYP. ----11.5 0.6 MAX -50 60 -1.5 -0.8
Unit V µA mA V dB dB
MITSUBISHI
(1/5)
June/2004
Datasheet pdf - http://www.DataSheet4U.co.kr/
June/2004
MITSUBISHI SEMICONDUCTOR
MGF4931AM
SUPER LOW NOISE InGaAs HEMT (4pin flat lead package)
Fig.1
+0.1 0.30 -0.05 ‡A
2.10 •}0.1 1.25 0.65 0.60 +0.1 0.40 -0.05 ‡B
2.05 •}0.1
Top
1.25 •}0.1
‡@ +0.1 0.30 -0.05 0.65 0.65 1.30
www.DataSheet.net/
‡A +0.1 0.30 -0.05
+0.05 0.11 -0
Side
‡@ ‡A
0.49 •}0.05
Bottom
(0.85)
Unit: mm ‡@Gate ‡A Source ‡B Drain Wide lead is Drain.
‡A
‡B
(GD-30)
MITSUBISHI
(2/5)
June/2004
Datasheet pdf - http://www.DataSheet4U.co.kr/
June/2004
MITSUBISHI SEMICONDUCTOR
MGF4931AM
SUPER LOW NOISE InGaAs HEMT (4pin flat lead package)
TYPICAL CHARACTERISTICS
(Ta=25°C)
ID vs. VDS
50 Drain Current, ID(mA) 40 30 20 10 0 0 1 2 3 4 Drain to Source voltage, VDS(V)
(VGS=~0.1V/STEP)
ID vs. VGS
50 40 30 20 10 0 -1.0
(VDS=2V)
Drain Current, ID(mA)
-0.5
0.0
Gate to Souce voltage, VGS(V)
www.DataSheet.net/
NF & Gs vs. ID
(f=12GHz, VDS=2V)
2..