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MGF4931AM Dataheets PDF



Part Number MGF4931AM
Manufacturers Mitsubishi Electric Semiconductor
Logo Mitsubishi Electric Semiconductor
Description SUPER LOW NOISE InGaAs HEMT
Datasheet MGF4931AM DatasheetMGF4931AM Datasheet (PDF)

June/2004 MITSUBISHI SEMICONDUCTOR MGF4931AM SUPER LOW NOISE InGaAs HEMT (4pin flat lead package) DESCRIPTION The MGF4931AM super-low noise HEMT (High Electron Mobility Transistor) is designed for use in S to Ku band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost performance. Outline Drawing FEATURES Low noise figure @ f=12GHz NFmin. = 0.6dB (Typ.) High associated gain @ f=12GHz Gs = 11.5dB (Typ.) Fig.1 MITSUBISHI Proprietary APPLICATION S to Ku.

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June/2004 MITSUBISHI SEMICONDUCTOR MGF4931AM SUPER LOW NOISE InGaAs HEMT (4pin flat lead package) DESCRIPTION The MGF4931AM super-low noise HEMT (High Electron Mobility Transistor) is designed for use in S to Ku band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost performance. Outline Drawing FEATURES Low noise figure @ f=12GHz NFmin. = 0.6dB (Typ.) High associated gain @ f=12GHz Gs = 11.5dB (Typ.) Fig.1 MITSUBISHI Proprietary APPLICATION S to Ku band low noise amplifiers Not to be reproduced or disclosed without permission by Mitsubishi Electric QUALITY GRADE GG RECOMMENDED BIAS CONDITIONS VDS=2V , ID=7.5mA ORDERING INFORMATION Tape & reel 3000pcs./reel Keep Safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable , but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury , fire or property damage. Remember to give due consideration to safety when making your circuit designs , with appropriate measure such as (I) placement of substitutive , auxiliary circuits , (ii) use of non-flammble material or (iii) prevention against any malfunction or mishap. www.DataSheet.net/ ABSOLUTE MAXIMUM RATINGS Symbol VGDO VGSO ID PT Tch Tstg Parameter Gate to drain voltage Gate to source voltage Drain current Total power dissipation Channel temperature Storage temperature (Ta=25°C ) Ratings -4 -4 IDSS 50 125 -55 to +125 (Ta=25°C ) Unit V V mA mW °C °C ELECTRICAL CHARACTERISTICS Symbol V(BR)GDO IGSS IDSS VGS(off) Gs NFmin. Parameter Gate to drain breakdown voltage Gate to source leakage current Saturated drain current Gate to source cut-off voltage Associated gain Minimum noise figure Test conditions IG=-10µA VGS=-2V,VDS=0V VGS=0V,VDS=2V VDS=2V,ID=500µA VDS=2V, ID=7.5mA,f=12GHz MIN. -3 -10 -0.1 10.0 -- Limits TYP. ----11.5 0.6 MAX -50 60 -1.5 -0.8 Unit V µA mA V dB dB MITSUBISHI (1/5) June/2004 Datasheet pdf - http://www.DataSheet4U.co.kr/ June/2004 MITSUBISHI SEMICONDUCTOR MGF4931AM SUPER LOW NOISE InGaAs HEMT (4pin flat lead package) Fig.1 +0.1 0.30 -0.05 ‡A 2.10 •}0.1 1.25 0.65 0.60 +0.1 0.40 -0.05 ‡B 2.05 •}0.1 Top 1.25 •}0.1 ‡@ +0.1 0.30 -0.05 0.65 0.65 1.30 www.DataSheet.net/ ‡A +0.1 0.30 -0.05 +0.05 0.11 -0 Side ‡@ ‡A 0.49 •}0.05 Bottom (0.85) Unit: mm ‡@Gate ‡A Source ‡B Drain Wide lead is Drain. ‡A ‡B (GD-30) MITSUBISHI (2/5) June/2004 Datasheet pdf - http://www.DataSheet4U.co.kr/ June/2004 MITSUBISHI SEMICONDUCTOR MGF4931AM SUPER LOW NOISE InGaAs HEMT (4pin flat lead package) TYPICAL CHARACTERISTICS (Ta=25°C) ID vs. VDS 50 Drain Current, ID(mA) 40 30 20 10 0 0 1 2 3 4 Drain to Source voltage, VDS(V) (VGS=~0.1V/STEP) ID vs. VGS 50 40 30 20 10 0 -1.0 (VDS=2V) Drain Current, ID(mA) -0.5 0.0 Gate to Souce voltage, VGS(V) www.DataSheet.net/ NF & Gs vs. ID (f=12GHz, VDS=2V) 2..


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