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MGF4934BM Dataheets PDF



Part Number MGF4934BM
Manufacturers Mitsubishi Electric Semiconductor
Logo Mitsubishi Electric Semiconductor
Description SUPER LOW NOISE InGaAs HEMT
Datasheet MGF4934BM DatasheetMGF4934BM Datasheet (PDF)

May/2008 MITSUBISHI SEMICONDUTOR MGF4934AM/BM SUPER LOW NOISE InGaAs HEMT (4pin flat lead package) DESCRIPTION The MGF4934BM super-low noise HEMT (High Electron Mobility Transistor) is designed for use in S to Ku band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost performance. Outline Drawing FEATURES Low noise figure @ f=12GHz NFmin. = 0.50dB (Typ.) High associated gain @ f=12GHz Gs = 12.5dB (Typ.) Fig.1 MITSUBISHI Proprietary APPLICATION S to .

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May/2008 MITSUBISHI SEMICONDUTOR MGF4934AM/BM SUPER LOW NOISE InGaAs HEMT (4pin flat lead package) DESCRIPTION The MGF4934BM super-low noise HEMT (High Electron Mobility Transistor) is designed for use in S to Ku band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost performance. Outline Drawing FEATURES Low noise figure @ f=12GHz NFmin. = 0.50dB (Typ.) High associated gain @ f=12GHz Gs = 12.5dB (Typ.) Fig.1 MITSUBISHI Proprietary APPLICATION S to Ku band low noise amplifiers Not to be reproduced or disclosed without permission by Mitsubishi Electric QUALITY GRADE GG RECOMMENDED BIAS CONDITIONS VDS=2V , ID=10mA ORDERING INFORMATION Tape & reel 3000pcs/reel Keep Safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measure such as (I) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. www.DataSheet.net/ ABSOLUTE MAXIMUM RATINGS Symbol VGDO VGSO ID PT Tch Tstg Parameter Gate to drain voltage Gate to source voltage Drain current Total power dissipation Channel temperature Storage temperature (Ta=25°C ) Ratings -4 -4 IDSS 50 125 -55 to +125 (Ta=25°C ) Unit V V mA mW °C °C ELECTRICAL CHARACTERISTICS Symbol V(BR)GDO IGSS IDSS VGS(off) Gs NFmin. Parameter Gate to drain breakdown voltage Gate to source leakage current Saturated drain current Gate to source cut-off voltage Associated gain Minimum noise figure Test conditions MIN. IG=-10µA VGS=-2V,VDS=0V VGS=0V,VDS=2V VDS=2V,ID=500µA VDS=2V, ID=10mA,f=12GHz -3.5 -12 -0.1 11.5 -- Limits TYP. ----12.5 0.50 MAX -50 60 -1.5 -0.80 Unit V µA mA V dB dB MITSUBISHI (1/6) Datasheet pdf - http://www.DataSheet4U.co.kr/ May/2008 MITSUBISHI SEMICONDUTOR MGF4934AM/BM SUPER LOW NOISE InGaAs HEMT (4pin flat lead package) Fig.1 0.30 +0.1 -0.05 2.10 ±0.1 1.30 ±0.05 (0.65) (0.65) 0.30 -0.05 +0.1 ② ① ±0.1 ±0.1 2.05 1.25 Top B ③ +0.1 -0.05 r ② +0.1 0.30 -0.05 0.11 -0 +0.05 0.40 (0.60) (0.65) www.DataSheet.net/ Side ③ ② Unit: mm (0.85) Bottom 0.49 ±0.05 1.25 ±0.05 ① Gate ② Source ③ Drain ② ① (GD-30) MITSUBISHI (2/6) Datasheet pdf - http://www.DataSheet4U.co.kr/ May/2008 MITSUBISHI SEMICONDUTOR MGF4934AM/BM SUPER LOW NOISE InGaAs HEMT (4pin flat lead package) TYPICAL CHARACTERISTICS (Ta=25°C) ID vs. VDS (VGS=~0.1V/STEP) 50 50 ID vs. VGS (VDS=2V) Drain Current, I D(mA) 30 Drain Current, I D(mA) 0 1 2 3 4 40 40 30 20 20 10 10 0 0 -1.0 -0.5 0.0 Drain to Source voltage, VDS(V) Gate to Souce voltage, VGS(V) www.DataSheet.net/ NF & Gs vs. ID 2.2 2.0 Ta=25℃ VDS=2V f=12GHz 15 14 13 Noise Figure, NF (dB) 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 Gs 12 11 10 9 8 NF 7 6 5 4 5 10 15 20 Drain Current, ID (mA) MITSUBISHI (3/6) Datasheet pdf - http://www.DataSheet4U.co.kr/ Associated Gain, Gs (dB) May/2008 MITSUBISHI SEMICONDUTOR MGF4934AM/BM SUPER LOW NOISE InGaAs HEMT (4pin flat lead package) S PARAMETERS (VDS=2V,ID=10mA,Ta=room temperature) Freq. (GHz) 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 S11 (mag) (ang) 0.986 -14.0 0.961 -27.8 0.918 -41.9 0.863 -59.4 0.808 -72.1 0.748 -85.2 0.683 -98.1 0.613 -111.9 0.543 -126.8 0.474 -142.9 0.421 -160.9 0.395 177.9 0.395 154.9 0.433 132.9 0.491 114.0 0.559 97.5 0.630 83.0 0.692 70.3 0.739 60.2 0.787 52.4 0.828 45.4 0.866 39.4 0.894 33.7 0.921 26.1 0.937 16.9 0.936 5.9 S21 (mag) (ang) 4.534 163.6 4.478 148.2 4.394 132.8 4.523 116.2 4.309 102.2 4.148 88.6 4.015 75.1 3.860 61.9 3.744 49.0 3.644 35.8 3.552 22.8 3.488 9.6 3.396 -4.0 3.295 -17.6 3.183 -31.5 3.056 -45.9 2.886 -60.6 2.662 -74.9 2.401 -87.7 2.198 -98.5 2.060 -109.9 1.940 -120.6 1.810 -131.4 1.710 -142.1 1.632 -152.9 1.541 -165.3 www.DataSheet.net/ S12 (mag) (ang) 0.014 79.1 0.027 70.5 0.038 61.9 0.052 50.3 0.060 43.3 0.067 36.9 0.073 30.5 0.078 25.3 0.082 20.9 0.087 17.1 0.092 14.0 0.100 11.1 0.111 7.6 0.122 2.2 0.133 -4.2 0.144 -11.1 0.154 -18.6 0.161 -26.6 0.169 -34.2 0.174 -42.1 0.179 -50.4 0.180 -58.5 0.183 -65.4 0.184 -71.5 0.187 -78.0 0.186 -86.0 S22 (mag) (ang) 0.676 -11.0 0.663 -22.3 0.638 -32.7 0.580 -45.1 0.559 -53.8 0.530 -62.2 0.496 -70.0 0.454 -76.5 0.411 -83.1 0.364 -91.0 0.321 -100.6 0.278 -114.7 0.239 -133.9 0.214 -159.5 0.219 170.8 0.256 144.4 0.315 122.4 0.379 104.1 0.440 88.4 0.484 73.6 0.527 60.5 0.575 47.9 0.632 35.7 0.695 25.4 0.770 16.7 0.846 8.8 Noise Parameter Freq. (GHz) 1 2 3 4 5 6 7 8 9 10 11 12 13 14 (VDS=2V,ID=10mA, Ta=room temperature)) NFmin (dB) 0.25 0.26 0.27 0.29 0.31 0.33 0.36 0.38 0.41 0.43 0.48 0.51 0.54 0.58 Γopt (mag) (ang) 0.99 7.2 0.98 11.


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