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MGF4935AM Dataheets PDF



Part Number MGF4935AM
Manufacturers Mitsubishi Electric Semiconductor
Logo Mitsubishi Electric Semiconductor
Description SUPER LOW NOISE InGaAs HEMT
Datasheet MGF4935AM DatasheetMGF4935AM Datasheet (PDF)

May/2008 MITSUBISHI SEMICONDUTOR MGF4935AM SUPER LOW NOISE InGaAs HEMT (4pin flat lead package) DESCRIPTION The MGF4935AM super-low noise HEMT (High Electron Mobility Transistor) is designed for use in S to Ku band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost performance. Outline Drawing FEATURES Low noise figure @ f=12GHz NFmin. = 0.45dB (Typ.) High associated gain @ f=12GHz Gs = 12.0dB (Typ.) Fig.1 MITSUBISHI Proprietary APPLICATION S to Ku.

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