< Low Noise GaAs HEMT >
MGF4941CL
Micro-X type plastic package
DESCRIPTION
The MGF4941CL super-low noise InGaAs HEMT (...
< Low Noise GaAs HEMT >
MGF4941CL
Micro-X type plastic package
DESCRIPTION
The MGF4941CL super-low noise InGaAs HEMT (High Electron Mobility
Transistor) is designed for use in K band amplifiers. The MGF4941CL is designed for automotive application and AEC-Q101 qualified.
Outline Drawing
FEATURES
Low noise figure @ f=25.2GHz NFmin. = 2.4dB (Typ.) High associated gain @ f=25.2GHz Gs = 10.0dB (Typ.)
Fig.1
APPLICATION
K band low noise amplifiers
QUALITY GRADE
GG
MITSUBISHI Proprietary Not to be reproduced or disclosed without permission by Mitsubishi Electric
RECOMMENDED BIAS CONDITIONS
VDS=1.5V, VGS=0V
ORDERRING INFORMATION
Tape & reel 4000pcs./reel
www.DataSheet.net/
RoHS COMPLIANT
MGF4941CL is a RoHS compliant product. RoHS compliance is indicated by the letter “G” after the Lot Marking.
ABSOLUTE MAXIMUM RATINGS
Symbol VGDO VGSO ID PT Tch Tstg Parameter Gate to drain voltage Gate to source voltage Drain current Total power dissipation Channel temperature Storage temperature
(Ta=25C )
Ratings -3 -3 55 75 125 -55 to +125
(Ta=25C )
Unit V V mA mW C C
ELECTRICAL CHARACTERISTICS
Symbol V(BR)GDO IGSS IDSS VGS(off) Gs Parameter Gate to drain breakdown voltage Gate to source leakage current Saturated drain current Gate to source cut-off voltage Associated gain
Test conditions MIN. IG=-10A VGS=-2V,VDS=0V VGS=0V,VDS=1.5V VDS=1.5V,ID=500A VDS=1.5V, -3 -15 -0.1 7.5 --
Limits TYP. ----10.0 2.4 MAX -50 60 -1.5 -3.8
Unit V A mA V dB dB
VGS=0V,f=25.2GHz NFmin. Mini...