MGF4964BL

< Low Noise GaAs HEMT > MGF4964BL Micro-X type plastic package DESCRIPTION The MGF4964BL super-low noise InGaAs HEMT (High Electron Mobility Transistor) is designed for use in K band amplifiers. Outline Drawing FEATURES Low noise figure @ f=20GHz NFmin. = 0.65dB (Typ.) High associated gain @ f=20GHz Gs = 13.5dB (Typ.) Fig.1 APPLICATION C to K band low noise amplifiers QUALITY GRADE GG MITSUBISHI Proprietary Not to be reproduced or disclosed without permission by Mitsubishi Electric RECOMMENDED BIAS CONDITIONS VDS=2V, ID=10mA ORDERRING INFORMATION Tape & reel 4000pcs./reel www.DataSheet.net/ RoHS COMPLIANT MGF4964BL is a RoHS compliant product. RoHS compliance is indicated by the letter “G” after the Lot Marking. ABSOLUTE MAXIMUM RATINGS Symbol VGDO VGSO ID PT Tch Tstg Parameter Gate to drain voltage Gate to source voltage Drain current Total power dissipation Channel temperature Storage temperature (Ta=25C ) Ratings -3 -3 IDSS 50 125 -55 to +125 (Ta=25C ) Unit V V mA mW C C ELECTRICAL CHARACTERISTICS Symbol V(BR)GDO IGSS IDSS VGS(off) Gs Parameter Gate to drain breakdown voltage Gate to source leakage current Saturated drain current Gate to source cut-off voltage Associated gain Test conditions MIN. IG=-10A VGS=-2V,VDS=0V VGS=0V,VDS=2V VDS=2V,ID=500A VDS=2V, -3 -15 -0.1 11.5 -- Limits TYP. ----13.5 0.65 MAX -50 60 -1.5 -0.90 Unit V A mA V dB dB ID=10mA,f=20GHz NFmin. Minimum noise figure Note: Gs and NFmin. are tested with sampling inspection. Publ...