MGFC47B3538B Datasheet PDF - Mitsubishi Electric Semiconductor

MGFC47B3538B 3.5 – 3.8GHz BAND / 50W DESCRIPTION The MGFC47B3538B is an int...

MGFC47B3538B 3.5 – 3.8GHz BAND / 50W DESCRIPTION The MGFC47B3538B is an internally impedance-matched GaAs power FET especially designed for use in 3.5 – 3.8 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability. OUTLINE DRAWING FEATURES Crass AB operation Internally matched to 50(ohm)  High output power: Po(SAT) = 50 W (typ.)  High power gain: GP = 10 dB (TPE.) @Po = 37dBm  Distortion: EVM = 2.0% (TPE.) @ Po = 37dBm Recommended Bias Condition  Vd = 12(V)  ID = 1.5 (A)  Rg = 10 ohm GF-60 www.DataSheet.net/ ABSOLUTE MAXIMUM RATINGS Symbol VGDO VGSO MAXID PT *1 Tch Tstg *1 : Tc=25deg.C (Ta=25deg.C) Ratings -15 -10 12 115 175 -55 / +150 Unit V V A W deg.C deg.C Parameter Gate to drain voltage Gate to source voltage Maximum drain current Total power dissipation Channel temperature Storage temperature Keep Safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs , with appropriate measure such as (I) placement of substitutive , auxiliary circuits , (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. ELECTRICAL CARACTERISTIC...