C band Internally Matched Power GaAs FET
MGFC47B3538B
3.5 – 3.8GHz BAND / 50W
DESCRIPTION
The MGFC47B3538B is an int...
Description
MGFC47B3538B
3.5 – 3.8GHz BAND / 50W
DESCRIPTION
The MGFC47B3538B is an internally impedance-matched GaAs power FET especially designed for use in 3.5 – 3.8 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.
OUTLINE DRAWING
FEATURES
Crass AB operation Internally matched to 50(ohm) High output power: Po(SAT) = 50 W (typ.) High power gain: GP = 10 dB (TPE.) @Po = 37dBm Distortion: EVM = 2.0% (TPE.) @ Po = 37dBm
Recommended Bias Condition
Vd = 12(V) ID = 1.5 (A) Rg = 10 ohm
GF-60
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ABSOLUTE MAXIMUM RATINGS
Symbol VGDO VGSO MAXID PT *1 Tch Tstg
*1 : Tc=25deg.C
(Ta=25deg.C) Ratings -15 -10 12 115 175 -55 / +150 Unit V V A W deg.C deg.C
Parameter Gate to drain voltage Gate to source voltage Maximum drain current Total power dissipation Channel temperature Storage temperature
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