2.3-2.5GHz HBT HYBRID IC
MITSUBISHI SEMICONDUCTOR
MGFS36E2325
Specifications are subject to change without notice.
2.3-2.5GHz HBT HYBRID IC
Ou...
Description
MITSUBISHI SEMICONDUCTOR
MGFS36E2325
Specifications are subject to change without notice.
2.3-2.5GHz HBT HYBRID IC
Outline Drawing
DESCRIPTION
MGFS36E2325 is a GaAs RF amplifier designed for WiMAX CPE.
4.5 1.0
FEATURES
InGaP HBT Device 6V Operation 27dBm Linear Output Power 33dB Linear Gain Integrated Output Power Detector Integrated 1-bit 16dB Step Attenuator 50ohms Matched Surface Mount Package RoHS Compliant Package
4.5
36E 2325 (Lot No.)
10
9
8
7
6
APPLICATIONS
IEEE802.16-2004, IEEE802.16e-2005
1 2 3 4 5
1 2 3 4 5 6 7 8 9 10
Pin Vc (Vcb) Vc (Vc1) Vc (Vc2) Vc (Vc3) Pout Po_det GND Vref Vcont
DIM IN mm
(X-ray Top View)
FUNCTIONAL BLOCK DIAGRAM
Vc1
1000pF
www.DataSheet.net/
Vc2
Vc3
1000pF 1000pF
Pin Vcont (0/3V) Vcb
1000pF
Pout
Bias Circuit
Vref
Po_det
33kohms
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i)placement of substitutive, auxiliary, circuits, (ii)use of non-flammable material or (iii)prevention against any malfunction or mishap.
MITSUBISHI ELECTRIC CORP.
(1/6) January-2008
Datasheet pdf -
http://www.DataSheet4U.c
MITSUBISHI SEMICONDUCTOR
MGFS36E2325
Specifications are subject to change w...
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