MGFS36E2325

MITSUBISHI SEMICONDUCTOR MGFS36E2325 Specifications are subject to change without notice. 2.3-2.5GHz HBT HYBRID IC Outline Drawing DESCRIPTION MGFS36E2325 is a GaAs RF amplifier designed for WiMAX CPE. 4.5 1.0 FEATURES InGaP HBT Device 6V Operation 27dBm Linear Output Power 33dB Linear Gain Integrated Output Power Detector Integrated 1-bit 16dB Step Attenuator 50ohms Matched Surface Mount Package RoHS Compliant Package 4.5 36E 2325 (Lot No.) 10 9 8 7 6 APPLICATIONS IEEE802.16-2004, IEEE802.16e-2005 1 2 3 4 5 1 2 3 4 5 6 7 8 9 10 Pin Vc (Vcb) Vc (Vc1) Vc (Vc2) Vc (Vc3) Pout Po_det GND Vref Vcont DIM IN mm (X-ray Top View) FUNCTIONAL BLOCK DIAGRAM Vc1 1000pF www.DataSheet.net/ Vc2 Vc3 1000pF 1000pF Pin Vcont (0/3V) Vcb 1000pF Pout Bias Circuit Vref Po_det 33kohms Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i)placement of substitutive, auxiliary, circuits, (ii)use of non-flammable material or (iii)prevention against any malfunction or mishap. MITSUBISHI ELECTRIC CORP. (1/6) January-2008 Datasheet pdf - http://www.DataSheet4U.c MITSUBISHI SEMICONDUCTOR MGFS36E2325 Specifications are subject to change w...