MGFS36E3436A

MITSUBISHI SEMICONDUCTOR MGFS36E3436A Specifications are subject to change without notice. 3.4-3.6GHz HBT HYBRID IC Outline Drawing DESCRIPTION MGFS36E3436A is a GaAs RF amplifier designed for WiMAX CPE. 4.5 1.0 FEATURES InGaP HBT Device 6V Operation 30dB Linear Gain 2.5% EVM at an Output power of 25dBm 4% EVM at an Output power of 27dBm Integrated Output Power Detector Integrated 1-bit 21dB Step Attenuator 50Ω Matched Input/Output Ports Surface Mount Package RoHS Compliant Package 4.5 36E 3436A 2527 (Lot No.) 10 9 8 7 6 APPLICATIONS IEEE802.16-2004, IEEE802.16e-2005 1 2 3 4 5 (X-ray Top View) 1 2 3 4 5 6 7 8 9 10 Pin Vc (Vcb) Vc (Vc1) Vc (Vc2) Vc (Vc3) Pout Po_det GND Vref Vcont DIM IN mm FUNCTIONAL BLOCK DIAGRAM www.DataSheet.net/ Vc1 1000pF Vc2 Vc3 1000pF 1000pF Pin Vcont (0/3V) Vcb 1000pF Pout Bias Circuit Vref Po_det 33kohms 15kohm Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i)placement of substitutive, auxiliary, circuits, (ii)use of non-flammable material or (iii)prevention against any malfunction or mishap. MITSUBISHI ELECTRIC CORP. (1/8) July-2008 Datasheet pdf - http://www.DataSheet4U.co.kr...