3.4-3.6GHz HBT HYBRID IC
MITSUBISHI SEMICONDUCTOR
MGFS36E3436A
Specifications are subject to change without notice.
3.4-3.6GHz HBT HYBRID IC
O...
Description
MITSUBISHI SEMICONDUCTOR
MGFS36E3436A
Specifications are subject to change without notice.
3.4-3.6GHz HBT HYBRID IC
Outline Drawing
DESCRIPTION
MGFS36E3436A is a GaAs RF amplifier designed for WiMAX CPE.
4.5 1.0
FEATURES
InGaP HBT Device 6V Operation 30dB Linear Gain 2.5% EVM at an Output power of 25dBm 4% EVM at an Output power of 27dBm Integrated Output Power Detector Integrated 1-bit 21dB Step Attenuator 50Ω Matched Input/Output Ports Surface Mount Package RoHS Compliant Package
4.5
36E 3436A 2527 (Lot No.)
10
9
8
7
6
APPLICATIONS
IEEE802.16-2004, IEEE802.16e-2005
1 2 3 4 5 (X-ray Top View)
1 2 3 4 5 6 7 8 9 10
Pin Vc (Vcb) Vc (Vc1) Vc (Vc2) Vc (Vc3) Pout Po_det GND Vref Vcont
DIM IN mm
FUNCTIONAL BLOCK DIAGRAM
www.DataSheet.net/
Vc1
1000pF
Vc2
Vc3
1000pF 1000pF
Pin Vcont (0/3V) Vcb
1000pF
Pout
Bias Circuit
Vref
Po_det
33kohms 15kohm
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i)placement of substitutive, auxiliary, circuits, (ii)use of non-flammable material or (iii)prevention against any malfunction or mishap.
MITSUBISHI ELECTRIC CORP.
(1/8) July-2008
Datasheet pdf - http://www.DataSheet4U.co.kr...
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