2.3 - 2.5GHz HBT MMIC MODULE
Mitsubishi Semiconductors
MGFS38E2325-01
Specifications are subject to change without notice.
2.3 - 2.5GHz HBT MMIC MO...
Description
Mitsubishi Semiconductors
MGFS38E2325-01
Specifications are subject to change without notice.
2.3 - 2.5GHz HBT MMIC MODULE
Outline Drawing
DESCRIPTION
MGFS38E2325 is a GaAs RF amplifier designed for WiMAX CPE.
4.0 DIM in mm 1.0
FEATURES
InGaP HBT Device 5V Operation 28.5dBm Linear Output Power (64QAM, EVM=2.5%) 36dB Linear Gain Integrated Output Power Detector Integrated 1-bit Step Attenuator Surface Mount Package RoHS Compliant Package
4.0
10
9
8
7
6
APPLICATIONS
IEEE802.16-2004 IEEE802.16e-2005
GND
1
2
3
4
5
1 2 3 4 5 6 7 8 9 10
Pin Vc1, Vcb Vc2 Vc3 Vc4 Pout Vdet GND Vref Vcont
X-ray Top View
FUNCTIONAL BLOCK DIAGRAM
www.DataSheet.net/
Gain control Pin Vcont (0V/3.3V) Power Detector Vc1,Vcb (5V) Bias Circuit
Detector Circuit
Pout
Vdet
Vc2(5V) Vref(2.85V)
Vc3(5V) Vc4(5V)
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i)placement of substitutive, auxiliary, circuits, (ii)use of non-flammable material or (iii)prevention against any malfunction or mishap.
MITSUBISHI ELECTRIC CORPORATION
(1/21)
Rev. 1.1 Sep. -2010
Datasheet pdf - http://www.DataSheet4U.co.kr/
Mitsubishi Semiconductors
MGFS38E2325-01
Spec...
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