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MGFS38E2527-01 Dataheets PDF



Part Number MGFS38E2527-01
Manufacturers Mitsubishi Electric Semiconductor
Logo Mitsubishi Electric Semiconductor
Description 2.5 - 2.7GHz HBT MMIC MODULE
Datasheet MGFS38E2527-01 DatasheetMGFS38E2527-01 Datasheet (PDF)

Mitsubishi Semiconductors Preliminary Specifications are subject to change without notice. MGFS38E2527-01 2.5 - 2.7GHz HBT MMIC MODULE Outline Drawing DESCRIPTION MGFS38E2527 is a GaAs RF amplifier designed for WiMAX CPE. 4.0 DIM in mm 1.0 FEATURES • • • • • • • • InGaP HBT Device 5V Operation 28.5dBm Linear Output Power (64QAM, EVM=2.5%) 36dB Linear Gain Integrated Output Power Detector Integrated 1-bit Step Attenuator Surface Mount Package RoHS Compliant Package 4.0 10 9 8 7 6 APPLIC.

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Mitsubishi Semiconductors Preliminary Specifications are subject to change without notice. MGFS38E2527-01 2.5 - 2.7GHz HBT MMIC MODULE Outline Drawing DESCRIPTION MGFS38E2527 is a GaAs RF amplifier designed for WiMAX CPE. 4.0 DIM in mm 1.0 FEATURES • • • • • • • • InGaP HBT Device 5V Operation 28.5dBm Linear Output Power (64QAM, EVM=2.5%) 36dB Linear Gain Integrated Output Power Detector Integrated 1-bit Step Attenuator Surface Mount Package RoHS Compliant Package 4.0 10 9 8 7 6 APPLICATIONS IEEE802.16-2004 IEEE802.16e-2005 GND 1 2 3 4 5 1 2 3 4 5 6 7 8 9 10 Pin Vc1, Vcb Vc2 Vc3 Vc4 Pout Vdet GND Vref Vcont X-ray Top View FUNCTIONAL BLOCK DIAGRAM www.DataSheet.net/ Gain control Pin Vcont (0V/3.3V) Power Detector Vc1,Vcb (5V) Bias Circuit Detector Circuit Pout Vdet Vc2(5V) Vref(2.85V) Vc3(5V) Vc4(5V) Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i)placement of substitutive, auxiliary, circuits, (ii)use of non-flammable material or (iii)prevention against any malfunction or mishap. MITSUBISHI ELECTRIC CORPORATION (1/21) Rev. 0.5 May -2010 Datasheet pdf - http://www.DataSheet4U.co.kr/ Mitsubishi Semiconductors Preliminary Specifications are subject to change without notice. MGFS38E2527-01 2.5 - 2.7GHz HBT MMIC MODULE ABSOLUTE MAXIMUM RATINGS Symbol Vc1,Vc2,Vc3, Vc4,Vcb Vref Vcont Ic1+Icb Ic2 Ic3 Ic4 Pin Tc(op) Tstg Parameter Collector Supply Voltage Reference Voltage ATT Control Voltage Conditions Pout28.5dBm Pout28.5dBm Pout28.5dBm Pout28.5dBm Pout28.5dBm Pout28.5dBm Pout28.5dBm -40 -40 Value Min. Max. 8 3 3.5 50 100 200 800 3 +85 +125 50 Unit V V V mA mA mA mA dBm C C % Operation Current Input Power Operation Temperature Storage Temperature Duty Cycle *NOTE : Ta=25C unless otherwise noted, Zin=Zout=50 Each maximum rating is guaranteed independently. Please take care that MGFS38E2527 is operated under these conditions at the worst case on your terminal. ELECTRICAL CHARACTERISTICS Value Symbol f Gp EVM Vdet ATT** Ict Parameter Frequency Gain EVM Power Detector Voltage Control Gain Step Operating Current Vc1=Vc2=Vc3=Vc4=5V, Vref=2.85V, Vcont=0V Pout=28.5dBm 64QAM OFDM Modulation Duty Cycle <= 50% Test Conditions Min www.DataSheet.net/ Unit Typ Max 2700 36.0 2.5 1.5 25 950 MHz dB % V dB mA 2500 *NOTE : Ta=25C unless otherwise noted, Zin=Zout=50 **ATT=Gain(@Vcont=0V)-Gain(@Vcont=3.3V) ESD RATING : TBD MOISTURE SENSITIVITY LEVEL : TBD MITSUBISHI ELECTRIC CORPORATION (2/21) Rev. 0.5 May -2010 Datasheet pdf - http://www.DataSheet4U.co.kr/ Mitsubishi Semiconductors Preliminary Specifications are subject to change without notice. MGFS38E2527-01 2.5 - 2.7GHz HBT MMIC MODULE PERFORMANCE DATA (WiMAX OFDM 64QAM signal input) Vc=5V, Vref=2.85V, Vcont=0V, Duty Cycle=50%, Ta=25deg.C Gain vs. Output Power 40 38 36 34 Gain (dB) Operating Current vs. Output Power 1200 1000 800 Ict (mA) 600 400 200 0 2.5GHz 2.6GHz 2.7GHz 32 30 28 26 24 22 20 20 21 22 23 24 25 26 27 28 29 30 31 32 Output Power(dBm) 2.5GHz 2.6GHz 2.7GHz 20 21 22 23 24 25 26 27 28 29 30 31 32 Output Power(dBm) EVM vs. Output Power 10.0 9.0 8.0 7.0 6.0 EVM (%) 5.0 4.0 3.0 2.0 1.0 0.0 20 21 22 23 24 25 26 27 28 29 30 Output Power(dBm) 31 32 2.5GHz 2.6GHz 2.7GHz Detector Voltage vs. Output Power 3.0 2.5 2.0 Vdet (V) www.DataSheet.net/ 1.5 1.0 0.5 0.0 20 21 22 23 24 25 26 27 28 29 30 31 32 2.5GHz 2.6GHz 2.7GHz Output Power(dBm) ACP Characteristics -15 -15 2.5GHz 2.6GHz 2.7GHz -20 ACP @10.5MHz (dBm) -25 ACP @11.5MHz (dBm) 2.5GHz 2.6GHz 2.7GHz -20 -25 -30 -30 -35 -35 -40 20 21 22 23 24 25 26 27 28 29 30 31 32 -40 20 21 22 23 24 25 26 27 28 29 30 31 32 Output Power(dBm) Output Power(dBm) MITSUBISHI ELECTRIC CORPORATION (3/21) Rev. 0.5 May -2010 Datasheet pdf - http://www.DataSheet4U.co.kr/ Mitsubishi Semiconductors Preliminary Specifications are subject to change without notice. MGFS38E2527-01 2.5 - 2.7GHz HBT MMIC MODULE Attenuation Performance 40 35 30 25 Gain(dB) 20 15 10 5 0 2.0 2.2 2.4 freq.(GHz) 2.6 2.8 3.0 Vcont=0V Vcont=3.3V www.DataSheet.net/ MITSUBISHI ELECTRIC CORPORATION (4/21) Rev. 0.5 May -2010 Datasheet pdf - http://www.DataSheet4U.co.kr/ Mitsubishi Semiconductors Preliminary Specifications are subject to change without notice. MGFS38E2527-01 2.5 - 2.7GHz HBT MMIC MODULE Vc=5V, Vref=2.85V, Vcont=0V, Duty Cycle=50%, f=2.5GHz Gain vs. Output Power 40 38 36 34 Gain (dB) Operating Current vs. Output Power 1200 1000 800 Ict (mA) 600 400 200 0 32 30 28 26 24 22 20 20 21 22 23 24 25 26 27 28 29 30 31 32 -40deg.C -30deg.C 0deg.C 25deg.C 65deg.C 85deg.C -40deg.C -30deg.C 0deg.C 25deg.C 65deg.C 85deg.C 20 21 22 23 24 25 26 27 2.


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