Specifications are subject to change without notice.
MGFS38E3336 is a GaAs RF amplifier designed
for WiMAX CPE.
• InGaP HBT Device
• 5V Operation
• 28.5dBm Linear Output Power (64QAM, EVM=2.5%)
• 35dB Linear Gain
• Integrated Output Power Detector
• Integrated 1-bit Step Attenuator
• Surface Mount Package
• RoHS Compliant Package
FUNCTIONAL BLOCK DIAGRAM
3.3 - 3.6GHz HBT MMIC MODULE
DIM in mm
10 9 8 7 6
X-ray Top View
2 Vc1, Vcb
Vc2(5V) Vref(2.85V) Vc3(5V) Vc4(5V)
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always
the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage.
Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i)placement of
substitutive, auxiliary, circuits, (ii)use of non-flammable material or (iii)prevention against any malfunction or mishap.
MITSUBISHI ELECTRIC CORPORATION
Datasheet pdf - http://www.DataSheet4U.co.kr/