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MGFS38E3336-01 Dataheets PDF



Part Number MGFS38E3336-01
Manufacturers Mitsubishi Electric Semiconductor
Logo Mitsubishi Electric Semiconductor
Description 3.3 - 3.6GHz HBT MMIC MODULE
Datasheet MGFS38E3336-01 DatasheetMGFS38E3336-01 Datasheet (PDF)

Mitsubishi Semiconductors MGFS38E3336-01 Specifications are subject to change without notice. 3.3 - 3.6GHz HBT MMIC MODULE Outline Drawing DESCRIPTION MGFS38E3336 is a GaAs RF amplifier designed for WiMAX CPE. 4.0 DIM in mm 1.0 FEATURES • • • • • • • • InGaP HBT Device 5V Operation 28.5dBm Linear Output Power (64QAM, EVM=2.5%) 35dB Linear Gain Integrated Output Power Detector Integrated 1-bit Step Attenuator Surface Mount Package RoHS Compliant Package 4.0 10 9 8 7 6 APPLICATIONS IEEE8.

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Mitsubishi Semiconductors MGFS38E3336-01 Specifications are subject to change without notice. 3.3 - 3.6GHz HBT MMIC MODULE Outline Drawing DESCRIPTION MGFS38E3336 is a GaAs RF amplifier designed for WiMAX CPE. 4.0 DIM in mm 1.0 FEATURES • • • • • • • • InGaP HBT Device 5V Operation 28.5dBm Linear Output Power (64QAM, EVM=2.5%) 35dB Linear Gain Integrated Output Power Detector Integrated 1-bit Step Attenuator Surface Mount Package RoHS Compliant Package 4.0 10 9 8 7 6 APPLICATIONS IEEE802.16-2004 IEEE802.16e-2005 GND 1 2 3 4 5 1 2 3 4 5 6 7 8 9 10 Pin Vc1, Vcb Vc2 Vc3 Vc4 Pout Vdet GND Vref Vcont X-ray Top View FUNCTIONAL BLOCK DIAGRAM www.DataSheet.net/ Gain control Pin Vcont (0V/3.3V) Power Detector Vc1,Vcb (5V) Bias Circuit Detector Circuit Pout Vdet Vc2(5V) Vref(2.85V) Vc3(5V) Vc4(5V) Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i)placement of substitutive, auxiliary, circuits, (ii)use of non-flammable material or (iii)prevention against any malfunction or mishap. MITSUBISHI ELECTRIC CORPORATION (1/24) Rev. 1.1 Sep. -2010 Datasheet pdf - http://www.DataSheet4U.co.kr/ Mitsubishi Semiconductors MGFS38E3336-01 Specifications are subject to change without notice. 3.3 - 3.6GHz HBT MMIC MODULE Value Min. Max. 8 3 3.5 100 100 300 1000 3 +85 +125 50 ABSOLUTE MAXIMUM RATINGS Symbol Vc1,Vc2,Vc3, Vc4,Vcb Vref Vcont Ic1+Icb Ic2 Ic3 Ic4 Pin Tc(op) Tstg Parameter Collector Supply Voltage Reference Voltage ATT Control Voltage Conditions Unit V V V mA mA mA mA dBm C C % Operation Current Input Power Operation Temperature Storage Temperature Duty Cycle Pout28.5dBm -40 -40 - *NOTE : Ta=25C unless otherwise noted, Zin=Zout=50 Each maximum rating is guaranteed independently. Please take care that MGFS38E3336 is operated under these conditions at the worst case on your terminal. ELECTRICAL CHARACTERISTICS Value Symbol f Gp EVM Vdet ATT Ict Parameter Frequency Gain EVM Power Detector Voltage Control Gain Step Operating Current Test Conditions Min www.DataSheet.net/ Unit Typ Max 3600 36.0 2.5 1.8 23 950 MHz dB % V dB mA 3300 Vc1=Vc2=Vc3=Vc4=5V, Vref=2.85V, Vcont=0V Pout=28.5dBm 64QAM OFDM Modulation Duty Cycle <= 50% *NOTE : Ta=25C unless otherwise noted, Zin=Zout=50 **ATT=Gain(@Vcont=0V)-Gain(@Vcont=3.3V) MOISTURE SENSITIVITY LEVEL : LEVEL3 MITSUBISHI ELECTRIC CORPORATION (2/24) Rev. 1.1 Sep. -2010 Datasheet pdf - http://www.DataSheet4U.co.kr/ Mitsubishi Semiconductors MGFS38E3336-01 Specifications are subject to change without notice. 3.3 - 3.6GHz HBT MMIC MODULE PERFORMANCE DATA (WiMAX OFDM 64QAM signal input) Vc=5V, Vref=2.85V, Vcont=0V, Duty Cycle=50%, Ta=25deg.C Gain vs. Output Power 44.0 42.0 40.0 Gain (dB) 38.0 36.0 34.0 32.0 20 21 22 23 24 25 26 27 28 29 30 31 32 Operating Current vs. Output Power 1200 3.3GHz 3.4GHz 3.5GHz 3.6GHz 1000 800 Ict (mA) 600 400 200 0 20 21 22 23 24 25 26 27 28 29 30 31 32 3.3GHz 3.4GHz 3.5GHz 3.6GHz Output Power(dBm) Output Power(dBm) EVM vs. Output Power 6.0 3.3GHz 3.4GHz 3.5GHz 3.6GHz Detector Voltage vs. Output Power 3.0 2.5 2.0 Vdet (V) 1.5 www.DataSheet.net/ 5.0 4.0 EVM (%) 3.3GHz 3.4GHz 3.5GHz 3.6GHz 3.0 1.0 2.0 0.5 1.0 0.0 0.0 20 21 22 23 24 25 26 27 28 29 30 31 32 20 21 22 23 24 25 26 27 28 29 30 31 32 Output Power(dBm) Output Power(dBm) ACP Characteristics -24 -26 -28 [email protected] (dBc) -30 -32 -34 -36 -38 -40 20 21 22 23 24 25 26 27 28 29 30 31 32 Output Power(dBm) 3.3GHz 3.4GHz 3.5GHz 3.6GHz -30 -32 [email protected] (dBc) -34 -36 -38 -40 -42 -44 -46 20 21 22 23 24 25 26 27 28 29 30 31 32 Output Power(dBm) 3.3GHz 3.4GHz 3.5GHz 3.6GHz MITSUBISHI ELECTRIC CORPORATION (3/24) Rev. 1.1 Sep. -2010 Datasheet pdf - http://www.DataSheet4U.co.kr/ Mitsubishi Semiconductors MGFS38E3336-01 Specifications are subject to change without notice. 3.3 - 3.6GHz HBT MMIC MODULE Attenuation Performance 45 40 35 30 Gain(dB) 25 20 15 10 5 0 3.0 3.2 3.4 freq.(GHz) 3.6 3.8 4.0 Vcont=0V Vcont=3.3V www.DataSheet.net/ MITSUBISHI ELECTRIC CORPORATION (4/24) Rev. 1.1 Sep. -2010 Datasheet pdf - http://www.DataSheet4U.co.kr/ Mitsubishi Semiconductors MGFS38E3336-01 Specifications are subject to change without notice. 3.3 - 3.6GHz HBT MMIC MODULE Vc=5V, Vref=2.85V, Vcont=0V, Duty Cycle=50%, f=3.3GHz Gain vs. Output Power 44.0 Operating Current vs. Output Power 1400 1200 1000 42.0 40.0 Gain (dB) 38.0 Ict (mA) 800 600 400 200 0 -40deg.C -30deg.C 0deg.C 25deg.C 60deg.C 85deg.C 20 21 22 23 24 25 26 27 28 29 30 31 32 36.0 34.0 32.0 20 21 -40deg.C -30deg.C 0deg.C 25deg.C 60deg.C 85deg.C 22 23 24 25 26 27 28 29 30 31 32 Output Power(dBm) Output Power(dBm) EVM vs. Output Power 10.0 9.0 8.0 7.0 6.0.


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