RF3826

RF3826 30MHz to 2500MHz, 9W GaN Wideband Power Amplifier RF3826 30MHz TO 2500MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 Features     VGS Pin 1 Advanced GaN HEMT Technology Output Power of 9W Advanced Heat-Sink Technology 30MHz to 2500MHz Instantaneous Bandwidth Input Internally Matched to 50 28V Operation Typical Performance POUT 39.5dBm  Gain 12dB  Power Added Efficiency 45% (30MHz to 2500MHz)  Power Added Efficiency 50% (200MHz to 1800MHz) -40°C to 85°C Operating Temperature  RF IN Pin 2,3 RF OUT / VDS Pin 6,7   GND BASE Functional Block Diagram Product Description The RF3826 is a wideband Power Amplifier designed for CW and pulsed applications such as wireless infrastructure, RADAR, two way radios and general purpose amplification. Using an advanced high power density Gallium Nitride (GaN) semiconductor process, these high-performance amplifiers achieve high efficiency, flat gain and large instantaneous bandwidth in a single amplifier design. The RF3826 is an input matched GaN transistor packaged in an air cavity ceramic package which provides excellent thermal stability through the use of advanced heat sink and power dissipation technologies. Ease of integration is accomplished through the incorporation of optimized input matching network within the package that provides wideband gain and power performance in a single amplifier. An external output match offers the flexibility of further optimizing power and efficienc...