RF3826 30MHz to 2500MHz, 9W GaN Wideband Power Amplifier
RF3826
30MHz TO 2500MHz, 9W GaN WIDEBAND POWER AMPLIFIER
Package: AlN Leadless Chip Carrier / SO8
Features
VGS Pin 1
Advanced GaN HEMT Technology Output Power of 9W Advanced Heat-Sink Technology 30MHz to 2500MHz Instantaneous Bandwidth Input Internally Matched to 50 28V Operation Typical Performance POUT 39.5dBm Gain 12dB Power Added Efficiency 45% (30MHz to 2500MHz) Power Added Efficiency 50% (200MHz to 1800MHz) -40°C to 85°C Operating Temperature
RF IN Pin 2,3
RF OUT / VDS Pin 6,7
GND BASE
Functional Block Diagram
Product Description
The RF3826 is a wideband Power Amplifier designed for CW and pulsed applications such as wireless infrastructure, RADAR, two way radios and general purpose amplification. Using an advanced high power density Gallium Nitride (GaN) semiconductor process, these high-performance amplifiers achieve high efficiency, flat gain and large instantaneous bandwidth in a single amplifier design. The RF3826 is an input matched GaN transistor packaged in an air cavity ceramic package which provides excellent thermal stability through the use of advanced heat sink and power dissipation technologies. Ease of integration is accomplished through the incorporation of optimized input matching network within the package that provides wideband gain and power performance in a single amplifier. An external output match offers the flexibility of further optimizing power and efficiency for any sub-band within the overall bandwidth.
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Large Signal Models Available
Applications
Class AB Operation for Public Mobile Radio Power Amplifier Stage for Commercial Wireless Infrastructure General Purpose Tx Amplification Test and Instrumentation Civilian and Military Radar
Optimum Technology Matching® Applied
GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT
GaN HEMT
BiFET HBT
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2012, RF Micro Devices, Inc.
DS120418
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or
[email protected].
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Datasheet pdf - http://www.DataSheet4U.co.kr/
RF3826
Absolute Maximum Ratings Parameter
Drain Voltage (VD) Gate Voltage (VG) Gate Current (IG) Operational Voltage RF- Input Power Ruggedness (VSWR) Storage Temperature Range Operating Temperature Range (TC) Operating Junction Temperature (TJ) Human Body Model MTTF (TJ < 200°C, 95% Confidence Limits)* Thermal Resistance, RTH (junction to case) measured at TC = 85°C, DC bias only
Rating
150 -8 to +2 5 32 34 12:1 -55 to +125 -40 to +85 200 Class 1B 3E + 06 9.8
Unit
V V mA V dBm °C °C °C Hours °C/W
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. RoHS (Restriction of Hazardous Substances): Compliant per EU Directive 2002/95/EC.
* MTTF - median time to failure for wear-out failure mode (30% IDSS degradation) which is determined by the technology process reliability. Refer to product qualification report for FIT(random) failure rate. Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page two. Bias Conditions should also satisfy the following expression: PDISS < (TJ - TC)/RTH J - C and TC = TCASE
Parameter
Recommended Operating Conditions
Drain Voltage (VDSQ) Gate Voltage (VGSQ) Drain Bias Current RF Input Power (PIN) Input Source VSWR
Min.
Specification Typ.
Max.
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Unit
Condition
28 -5 -3 55
32 -2.5 32 10:1
V V mA dBm
RF Performance Characteristics
Frequency Range Linear Gain Power Gain Gain Flatness Gain Variation with Temperature Input Return Loss (S11) Output Power (P3dB) Po.