RFHA1003

RFHA1003 30MHz to 512MHz, 9W GaN Wideband Power Amplifier RFHA1003 30MHz TO 512MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 Features     VGS Pin 1 Advanced GaN HEMT Technology Output Power of 9W Advanced Heat-Sink Technology 30MHz to 512MHz Instantaneous Bandwidth Input Internally Matched to 50 28V Operation Typical Performance Output Power 39.5dBm Gain 19dB  Power Added Efficiency 70% -40°C to 85°C Operating Temperature   RF IN Pin 2,3 RF OUT / VDS Pin 6,7   GND BASE Functional Block Diagram  Product Description The RFHA1003 is a wideband Power Amplifier designed for CW and pulsed applications such as wireless infrastructure, RADAR, two way radios and general purpose amplification. Using an advanced high power density Gallium Nitride (GaN) semiconductor process, these high-performance amplifiers achieve high efficiency, flat gain, and large instantaneous bandwidth in a single amplifier design. The RFHA1003 is an input matched GaN transistor packaged in an air cavity ceramic package which provides excellent thermal stability through the use of advanced heat sink and power dissipation technologies. Ease of integration is accomplished through the incorporation of optimized input matching network within the package that provides wideband gain and power performance in a single amplifier. An external output match offers the flexibility of further optimizing power and efficiency for any sub-band within the overall bandwidth. ww...