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PS21963-S

Mitsubishi Electric Semiconductor

Dual-In-Line Package Intelligent Power Module

MITSUBISHI MITSUBISHI SEMICONDUCTOR SEMICONDUCTOR


Mitsubishi Electric Semiconductor

PS21963-S

File Download Download PS21963-S Datasheet


Description
MITSUBISHI MITSUBISHI SEMICONDUCTOR SEMICONDUCTOR Module> PS21963-S PS21963-S TRANSFER-MOLD TRANSFER-MOLD TYPE TYPE INSULATED INSULATED TYPE TYPE PS21963-S INTEGRATED POWER FUNCTIONS 600V/10A low-loss 5th generation IGBT inverter bridge for three phase DC-to-AC power conversion. Open emitter type. INTEGRATED DRIVE, PROTECTION AND SYSTEM CONTROL FUNCTIONS For upper-leg IGBTS : Drive circuit, High voltage isolated high-speed level shifting, Control supply under-voltage (UV) protection. For lower-leg IGBTS : Drive circuit, Control supply under-voltage protection (UV), Short circuit protection (SC). Fault signaling : Corresponding to an SC fault (Lower-leg IGBT) or a UV fault (Lower-side supply). Input interface : 3V, 5V line (High Active). APPLICATION AC100V~200V inverter drive for small power motor control. Fig. 1 PACKAGE OUTLINES 38 ±0.5 20×1.778 (=35.56 ) 35 ±0.3 A 0.5 1 www.DataSheet.net/ Dimensions in mm B 3.5 1.5 ±0.05 TERMINAL CODE 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. 17. 18. 19. 20. 21. 22. 23. 24. 25. (VNC) VUFB VVFB VWFB UP VP WP VP1 VNC* UN VN WN VN1 FO CIN VNC* VNO NW NV NU W V U P NC 17 (1) 14.4 ±0.5 0.4 (3.5) 0.28 1.778 ±0.2 33.7 ±0.5 Code 18 0.28 2.54 ±0.2 Lot No. 18.9 ±0.5 14.4 ±0.5 2- R1 .6 QR Type name 12 29.2 ±0.5 24 ±0.5 0.8 HEAT SINK SIDE 25 0.6 4-C1.2 14×2.54 (=35.56) 0.5 0.5 0.5 0.5 (0.678) 0.4 3.08 (0.678) (3....




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