< Silicon RF Power MOS FET (Discrete) >
RD04HMS2
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 950MHz, 4W
...
< Silicon RF Power MOS FET (Discrete) >
RD04HMS2
RoHS Compliance, Silicon MOSFET Power
Transistor, 175MHz, 950MHz, 4W
DESCRIPTION
RD04HMS2 is MOS FET type
transistor specifically OUTLINE DRAWING designed for VHF/UHF/890-950MHz RF power 6.0+/-0.15 amplifiers applications.
4.9+/-0.15
0.2+/-0.05
1
1.0+/-0.05
FEATURES
1. High Power gain and High Efficiency Pout=5.0Wtyp., Gp=14dBtyp. Drain Effi.=53%typ. @Vds=12.5V, Pin=0.2W, f=950MHz 2. Integrated gate protection diode
2
3
(0.25) (0.25)
INDEX MARK (Gate)
APPLICATION
For output stage of high power amplifiers in VHF/ UHF/890-950MHz band mobile radio sets.
0.2+/-0.05
0.9+/-0.1
Terminal No. 1.Drain (output) 2.Source (GND) 3.Gate (input) Note ( ):center value UNIT:mm
RoHS COMPLIANT
RD04HMS2 is a RoHS compliant product. RoHS compliance is indicating by the letter “G” after the Lot Marking. This product includes the lead in high melting temperature type solders. However, it is applicable to the following exceptions of RoHS Directions. 1. Lead in high melting temperature type solders (i.e. tin-lead solder alloys containing more than85% lead.)
www.DataSheet.net/
ABSOLUTE MAXIMUM RATINGS (Tc=25°C UNLESS OTHERWISE NOTED)
SYMBOL VDSS VGSS Pch Pin ID Tch Tstg Rth j-c PARAMETER Drain to Source Voltage Gate to Source Voltage Channel Dissipation Input Power Drain Current Junction Temperature Storage Temperature Thermal Resistance CONDITIONS Vgs=0V Vds=0V Tc=25°C Zg=Zl=50 Junction to Case RATINGS 40 -5/+10 50 0.7 3 150 -40 to +125 2...
