RD07MVS1B

< Silicon RF Power MOS FET (Discrete) > RD07MVS1B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,520MHz,7W OUTLINE DRAWING DESCRIPTION RD07MVS1B is a MOS FET type transistor specifically designed for VHF/UHF RF power 4.9+/-0.15 1.0+/-0.05 6.0+/-0.15 0.2+/-0.05 amplifiers applications. RD07MVS1B improved a drain surge than RD07MVS1 by optimizing MOSFET structure. 1 2 3.5+/-0.05 Datasheet pdf - http://www.DataSheet4U.co.kr/ 3 INDEX MARK (Gate) (0.22) (0.25) (0.25) FEATURES Pout>7W, Gp>10dB @Vdd=7.2V,f=520MHz High Efficiency: 60%typ. (175MHz) High Efficiency: 55%typ. (520MHz) www.DataSheet.net/ 0.2+/-0.05 0.9+/-0.1 High power gain: Terminal No. 1.Drain (output) 2.Source (GND) 3.Gate (input) Note ( ):center value UNIT:mm APPLICATION For output stage of high power amplifiers in VHF/UHF band mobile radio sets. RoHS COMPLIANT RD07MVS1B-101, T112 is a RoHS compliant product. RoHS compliance is indicating by the letter “G” after the Lot Marking. This product includes the lead in high melting temperature type solders. However, it is applicable to the following exceptions of RoHS Directions. 1.Lead in high melting temperature type solders(i.e.tin-lead solder alloys containing more than85% lead.) Publication Date : Oct．2011 1 2.0+/-0.05 (0.22) 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 < Silicon RF Power MOS FET (Discrete) > RD07MVS1B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,520MHz,7W ABSOLUTE MAXIMUM RATINGS (Tc=25°C UNLESS OTHERWISE NOTED) SYMBOL VD...