MOSFETs Silicon P-Channel MOS
TPCA8135
MOSFETs Silicon P-Channel MOS (U-MOS)
TPCA8135
1. Applications
• DC-DC Converters
2. Features
(1) (2) (3) (4...
Description
TPCA8135
MOSFETs Silicon P-Channel MOS (U-MOS)
TPCA8135
1. Applications
DC-DC Converters
2. Features
(1) (2) (3) (4) Small, thin package Low drain-source on-resistance: RDS(ON) = 96 mΩ (typ.) (VGS = -10 V) Low leakage current: IDSS = -10 µA (max) (VDS = -60 V) Enhancement mode: Vth = -2.0 to -3.0 V (VDS = -10 V, ID = -1.0 mA)
3. Packaging and Internal Circuit
1, 2, 3: Source 5, 6, 7, 8: Drain
4: Gate
SOP Advance
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4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Power dissipation Power dissipation Single-pulse avalanche energy Avalanche current Channel temperature Storage temperature (Note 5) (Tc = 25) (t = 10 s) (t = 10 s) (Note 2) (Note 3) (Note 4) (Note 1) (Note 1) Symbol VDSS VGSS ID IDP PD PD PD EAS IAR Tch Tstg Rating -60 -20/+10 -5 -15 20.4 3.3 1.9 34 -5 175 -55 to 150 W W W mJ A A Unit V
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual re...
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