TPCA8135

TPCA8135 MOSFETs Silicon P-Channel MOS (U-MOS) TPCA8135 1. Applications DC-DC Converters 2. Features (1) (2) (3) (4) Small, thin package Low drain-source on-resistance: RDS(ON) = 96 mΩ (typ.) (VGS = -10 V) Low leakage current: IDSS = -10 µA (max) (VDS = -60 V) Enhancement mode: Vth = -2.0 to -3.0 V (VDS = -10 V, ID = -1.0 mA) 3. Packaging and Internal Circuit 1, 2, 3: Source 5, 6, 7, 8: Drain 4: Gate SOP Advance www.DataSheet.net/ 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Power dissipation Power dissipation Single-pulse avalanche energy Avalanche current Channel temperature Storage temperature (Note 5) (Tc = 25) (t = 10 s) (t = 10 s) (Note 2) (Note 3) (Note 4) (Note 1) (Note 1) Symbol VDSS VGSS ID IDP PD PD PD EAS IAR Tch Tstg Rating -60 -20/+10 -5 -15 20.4 3.3 1.9 34 -5 175 -55 to 150 W W W mJ A  A Unit V Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual re...