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UNISONIC TECHNOLOGIES CO., LTD 2N65Z
2A, 650V N-CHANNEL POWER MOSFET
1 1 TO-251 TO-252
Power MOSFET
DESCRIPTION
The UTC 2N65Z is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.
1 TO-220F
1 TO-220F1
FEATURES
* RDS(ON) = 5.0Ω @ VGS = 10V * Ultra Low gate charge (typical 9.0nC) * Low reverse transfer capacitance (CRSS = typical 5.0 pF) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness
SYMBOL
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ORDERING INFORMATION
Package TO-220F1 TO-220F TO-251 TO-252 TO-252 1 G G G G G Pin Assignment 2 D D D D D 3 S S S S S Packing Tube Tube Tube Tube Tape Reel
Ordering Number Lead Free Halogen Free 2N65ZL-TF1-T 2N65ZG-TF1-T 2N65ZL-TF3-T 2N65ZG-TF3-T 2N65ZL-TM3-T 2N65ZG-TM3-T 2N65ZL-TN3-T 2N65ZG-TN3-T 2N65ZL-TN3-R 2N65ZG-TN3-R Note: Pin Assignment: G: Gate D: Drain S: Source
www.unisonic.com.tw Copyright © 2012 Unisonic Technologies Co., Ltd
1 of 6
QW-R502-825.b
Datasheet pdf - http://www.DataSheet4U.co.kr/
2N65Z
ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified)
Power MOSFET
PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 650 V Gate-Source Voltage VGSS ±20 V Avalanche Current (Note 2) IAR 2.0 A 2.0 A Continuous ID Drain Current Pulsed (Note 2) IDM 8.0 A 140 mJ Single Pulsed (Note 3) EAS Avalanche Energy Repetitive (Note 2) EAR 4.5 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns TO-220F/TO-220F1 21 W Power Dissipation PD TO-251/TO-252 28 W Junction Temperature TJ +150 °С Operating Temperature TOPR -55 ~ +150 °С Storage Temperature TSTG -55 ~ +150 °С Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by TJ 3. L=64mH, IAS=2.0A, VDD=50V, RG=25 Ω, Starting TJ = 25°C 4. ISD≤2.4A, di/dt≤200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C
THERMAL DATA
SYMBOL θJA θJc
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PARAMETER TO-220F/TO-220F1 Junction to Ambient TO-251/TO-252 TO-220F/TO-220F1 Junction to Case TO-251/TO-252
RATINGS 125 110 5.95 4.53
UNIT °С/W °С/W °С/W °С/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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2N65Z
ELECTRICAL CHARACTERISTICS (TJ =25°С, unless otherwise specified)
SYMBOL BVDSS IDSS TEST CONDITIONS PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current
Power MOSFET
MIN TYP MAX UNIT
VGS = 0V, ID = 250μA 650 V VDS = 650V, VGS = 0V 10 μA 5 μA Forward VGS = 20V, VDS = 0V Gate-Source Leakage Current IGSS Reverse VGS = -20V, VDS = 0V -5 μA Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID=250μA, Referenced to 25°C 0.4 V/°С ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250μA 2.0 4.0 V Static Drain-Source On-State Resistance RDS(ON) VGS = 10V, ID =1A 3.9 5.0 Ω DYNAMIC CHARACTERISTICS 270 350 pF Input Capacitance CISS VDS =25V, VGS =0V, Output Capacitance COSS 40 50 pF f =1MHz Reverse Transfer Capacitance CRSS 5 7 pF SWITCHING CHARACTERISTICS Turn-On Delay Time tD (ON) 10 30 ns Turn-On Rise Time tR 25 60 ns VDD =325V, ID =2.4A, RG=25Ω (Note 1, 2) Turn-Off Delay Time tD(OFF) 20 50 ns Turn-Off Fall Time tF 25 60 ns Total Gate Charge QG 9.0 11 nC VDS=520V, VGS=10V, Gate-Source Charge QGS 1.6 nC ID=2.4A (Note 1, 2) Gate-Drain Charge QGD 4.3 nC DRAIN-SOURCE DIODE CHARACTERISTICS Drain-Source Diode Forward Voltage VSD VGS = 0 V, ISD = 2.0 A 1.4 V Continuous Drain-Source Current ISD 2.0 A Pulsed Drain-Source Current ISM 8.0 A 180 ns Reverse Recovery Time trr VGS = 0 V, ISD = 2.4A, di/dt = 100 A/μs (Note1) Reverse Recovery Charge QRR 0.72 μC Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle≤2% 2. Essentially independent of operating temperature
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UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-825.b
Datasheet pdf - http://www.DataSheet4U.co.kr/
2N65Z
TEST CIRCUITS AND WAVEFORMS
+ VDS + L
Power MOSFET
D.U.T.
RG Driver VGS Same Type as D.U.T. * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test VDD
Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period P.W.
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D=
P. W. Period
VGS= 10V
IFM, Body Diode Forward Current ISD (D.U.T.) IRM Body Diode Reverse Current di/dt
Body Diode Recovery dv/dt VDS (D.U.T.) VDD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-825.b
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2N65Z
TEST CIRCUITS AND WAVEFORMS (Cont.)
Power MOSFET
VDS
90%
VGS
10%
tD(ON) tR tD(OFF) tF
.