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2N65Z Dataheets PDF



Part Number 2N65Z
Manufacturers Unisonic Technologies
Logo Unisonic Technologies
Description 650V N-CHANNEL POWER MOSFET
Datasheet 2N65Z Datasheet2N65Z Datasheet (PDF)

UNISONIC TECHNOLOGIES CO., LTD 2N65Z 2A, 650V N-CHANNEL POWER MOSFET 1 1 TO-251 TO-252 Power MOSFET „ DESCRIPTION The UTC 2N65Z is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits. 1 .

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UNISONIC TECHNOLOGIES CO., LTD 2N65Z 2A, 650V N-CHANNEL POWER MOSFET 1 1 TO-251 TO-252 Power MOSFET „ DESCRIPTION The UTC 2N65Z is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits. 1 TO-220F 1 TO-220F1 „ FEATURES * RDS(ON) = 5.0Ω @ VGS = 10V * Ultra Low gate charge (typical 9.0nC) * Low reverse transfer capacitance (CRSS = typical 5.0 pF) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness „ SYMBOL www.DataSheet.net/ „ ORDERING INFORMATION Package TO-220F1 TO-220F TO-251 TO-252 TO-252 1 G G G G G Pin Assignment 2 D D D D D 3 S S S S S Packing Tube Tube Tube Tube Tape Reel Ordering Number Lead Free Halogen Free 2N65ZL-TF1-T 2N65ZG-TF1-T 2N65ZL-TF3-T 2N65ZG-TF3-T 2N65ZL-TM3-T 2N65ZG-TM3-T 2N65ZL-TN3-T 2N65ZG-TN3-T 2N65ZL-TN3-R 2N65ZG-TN3-R Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2012 Unisonic Technologies Co., Ltd 1 of 6 QW-R502-825.b Datasheet pdf - http://www.DataSheet4U.co.kr/ 2N65Z „ ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified) Power MOSFET PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 650 V Gate-Source Voltage VGSS ±20 V Avalanche Current (Note 2) IAR 2.0 A 2.0 A Continuous ID Drain Current Pulsed (Note 2) IDM 8.0 A 140 mJ Single Pulsed (Note 3) EAS Avalanche Energy Repetitive (Note 2) EAR 4.5 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns TO-220F/TO-220F1 21 W Power Dissipation PD TO-251/TO-252 28 W Junction Temperature TJ +150 °С Operating Temperature TOPR -55 ~ +150 °С Storage Temperature TSTG -55 ~ +150 °С Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by TJ 3. L=64mH, IAS=2.0A, VDD=50V, RG=25 Ω, Starting TJ = 25°C 4. ISD≤2.4A, di/dt≤200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C „ THERMAL DATA SYMBOL θJA θJc www.DataSheet.net/ PARAMETER TO-220F/TO-220F1 Junction to Ambient TO-251/TO-252 TO-220F/TO-220F1 Junction to Case TO-251/TO-252 RATINGS 125 110 5.95 4.53 UNIT °С/W °С/W °С/W °С/W UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 6 QW-R502-825.b Datasheet pdf - http://www.DataSheet4U.co.kr/ 2N65Z „ ELECTRICAL CHARACTERISTICS (TJ =25°С, unless otherwise specified) SYMBOL BVDSS IDSS TEST CONDITIONS PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Power MOSFET MIN TYP MAX UNIT VGS = 0V, ID = 250μA 650 V VDS = 650V, VGS = 0V 10 μA 5 μA Forward VGS = 20V, VDS = 0V Gate-Source Leakage Current IGSS Reverse VGS = -20V, VDS = 0V -5 μA Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID=250μA, Referenced to 25°C 0.4 V/°С ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250μA 2.0 4.0 V Static Drain-Source On-State Resistance RDS(ON) VGS = 10V, ID =1A 3.9 5.0 Ω DYNAMIC CHARACTERISTICS 270 350 pF Input Capacitance CISS VDS =25V, VGS =0V, Output Capacitance COSS 40 50 pF f =1MHz Reverse Transfer Capacitance CRSS 5 7 pF SWITCHING CHARACTERISTICS Turn-On Delay Time tD (ON) 10 30 ns Turn-On Rise Time tR 25 60 ns VDD =325V, ID =2.4A, RG=25Ω (Note 1, 2) Turn-Off Delay Time tD(OFF) 20 50 ns Turn-Off Fall Time tF 25 60 ns Total Gate Charge QG 9.0 11 nC VDS=520V, VGS=10V, Gate-Source Charge QGS 1.6 nC ID=2.4A (Note 1, 2) Gate-Drain Charge QGD 4.3 nC DRAIN-SOURCE DIODE CHARACTERISTICS Drain-Source Diode Forward Voltage VSD VGS = 0 V, ISD = 2.0 A 1.4 V Continuous Drain-Source Current ISD 2.0 A Pulsed Drain-Source Current ISM 8.0 A 180 ns Reverse Recovery Time trr VGS = 0 V, ISD = 2.4A, di/dt = 100 A/μs (Note1) Reverse Recovery Charge QRR 0.72 μC Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle≤2% 2. Essentially independent of operating temperature www.DataSheet.net/ UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 6 QW-R502-825.b Datasheet pdf - http://www.DataSheet4U.co.kr/ 2N65Z „ TEST CIRCUITS AND WAVEFORMS + VDS + L Power MOSFET D.U.T. RG Driver VGS Same Type as D.U.T. * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test VDD Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period P.W. www.DataSheet.net/ D= P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) IRM Body Diode Reverse Current di/dt Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 6 QW-R502-825.b Datasheet pdf - http://www.DataSheet4U.co.kr/ 2N65Z „ TEST CIRCUITS AND WAVEFORMS (Cont.) Power MOSFET VDS 90% VGS 10% tD(ON) tR tD(OFF) tF .


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