DatasheetsPDF.com

2N6029 Dataheets PDF



Part Number 2N6029
Manufacturers Central Semiconductor Corp
Logo Central Semiconductor Corp
Description COMPLEMENTARY SILICON POWER TRANSISTORS
Datasheet 2N6029 Datasheet2N6029 Datasheet (PDF)

2N5629 2N5630 NPN 2N6029 2N6030 PNP COMPLEMENTARY SILICON POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5629, 2N6029 series devices are complementary silicon power transistors, manufactured by the epitaxial base process, designed for high voltage and high power amplifier applications. MARKING: FULL PART NUMBER TO-3 CASE MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current.

  2N6029   2N6029


Document
2N5629 2N5630 NPN 2N6029 2N6030 PNP COMPLEMENTARY SILICON POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5629, 2N6029 series devices are complementary silicon power transistors, manufactured by the epitaxial base process, designed for high voltage and high power amplifier applications. MARKING: FULL PART NUMBER TO-3 CASE MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Continuous Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC ICM IB PD TJ, Tstg JC 2N5629 2N6029 100 2N5630 2N6030 120 100 120 7.0 16 20 5.0 200 -65 to +200 0.875 ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICBO VCB=Rated VCBO ICEX VCE=Rated VCEO, VEB=1.5V ICEX VCE=Rated VCEO, VEB=1.5V, TC=150°C ICEO VCE=½Rated VCEO IEBO VEB=7.0V .


2N6028 2N6029 2N6030


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)