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15N40 Dataheets PDF



Part Number 15N40
Manufacturers Unisonic Technologies
Logo Unisonic Technologies
Description 400V N-CHANNEL POWER MOSFET
Datasheet 15N40 Datasheet15N40 Datasheet (PDF)

UNISONIC TECHNOLOGIES CO., LTD 15N40 Preliminary Power MOSFET 15A, 400V N-CHANNEL POWER MOSFET 1 „ DESCRIPTION TO-220 The UTC 15N40 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode. The UTC 15N40 is generally applied in high efficiency switch mode po.

  15N40   15N40



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UNISONIC TECHNOLOGIES CO., LTD 15N40 Preliminary Power MOSFET 15A, 400V N-CHANNEL POWER MOSFET 1 „ DESCRIPTION TO-220 The UTC 15N40 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode. The UTC 15N40 is generally applied in high efficiency switch mode power supplies. 1 TO-220F1 „ FEATURES * RDS(ON)=0.35Ω @ VGS=10V,ID=7.5A * Low Gate Charge (Typical 28nC) * Low CRSS (Typical 17pF) * High Switching Speed „ SYMBOL 2.Drain www.DataSheet.net/ 1.Gate 3.Source „ ORDERING INFORMATION Pin Assignment 1 2 3 G D S G D S Packing Tube Tube Ordering Number Package Lead Free Halogen Free 15N40L-TA3-T 15N40G-TA3-T TO-220 15N40L-TF1-T 15N40G-TF1-T TO-220F1 Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2011 Unisonic Technologies Co., Ltd 1 of 6 QW-R502-633.b Datasheet pdf - http://www.DataSheet4U.co.kr/ 15N40 „ PARAMETER Drain to Source Voltage Gate-Source Voltage Preliminary SYMBOL VDSS VGSS Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified.) (Note 5) RATINGS UNIT 400 V ±30 V TC=25°C 15 A ID Continuous Drain Current TC=100°C 9 A Pulsed (Note 2) IDM 60 A Avalanche Current (Note 2) IAR 15 A Single Pulsed (Note 3) EAS 731 mJ Avalanche Energy Repetitive (Note 2) EAR 17 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 15 V/ns Power Dissipation (TC=25°C) 170 W PD Derate above 25°C 1.45 W/°C Junction Temperature TJ +150 °C Storage Temperature TSTG -55~+150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating; Pulse width limited by maximum junction temperature. 3. L=6.5mH, IAS=15A. VDD=50V, RG=25Ω, Starting TJ=25°C 4. ISD≤15A, di/dt≤200A/µs, VDD≤BVDSS, Starting TJ=25°C 5. Drain current limited by maximum junction temperature „ THERMAL CHARACTERISTICS SYMBOL θJA θJC www.DataSheet.net/ PARAMETER Junction to Ambient Junction to Case RATINGS 62.5 0.7 UNIT °C/W °C/W UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 6 QW-R502-633.b Datasheet pdf - 15N40 „ PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain-Source Leakage Current Gate- Source Leakage Current Forward Reverse Preliminary Power MOSFET ELECTRICAL CHARACTERISTICS SYMBOL BVDSS TEST CONDITIONS ID=250µA, VGS=0V, TJ=25°C MIN TYP MAX UNIT 400 0.5 1 10 +100 -100 2.0 4.0 0.26 0.35 1310 1750 210 280 17 25 28 8 12 26 55 72 40 36 V V/°C µA µA nA nA V Ω pF pF pF nC nC nC ns ns ns ns A A V ns µC ∆BVDSS/∆TJ Reference to 25°C, ID=250µA IDSS IGSS VDS=400V, VGS=0V, VDS=320V, TC=125°C VGS=+30V, VDS=0V VGS=-30V , VDS=0V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VGS=VDS, ID=250µA Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=7.5A DYNAMIC PARAMETERS Input Capacitance CISS VDS=25V, VGS=0V, f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge QG VDS=320V, VGS=10V, ID=15A Gate to Source Charge QGS (Note 1, 2) Gate to Drain ("Miller") Charge QGD Turn-ON Delay Time tD(ON) Rise Time tR VDD=200V, ID=15A, RG=25Ω (Note 1, 2) Turn-OFF Delay Time tD(OFF) Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS Maximum Body-Diode Pulsed Current ISM Drain-Source Diode Forward Voltage VSD ISD=15A, VGS=0V Body Diode Reverse Recovery Time trr ISD=15A, VGS=0V, dIF/dt=100A/µs (Note 1) Body Diode Reverse Recovery Charge QRR Notes: 1. Pulse Test: Pulse width≤300µs; Duty Cycle≤2%. 2. Essentially Independent of Operating Temperature Typical Characteristics www.DataSheet.net/ 62 120 154 90 15 60 1.4 333 3.24 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 6 QW-R502-633.b Datasheet pdf - http://www.DataSheet4U.co.kr/ 15N40 „ Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS www.DataSheet.net/ UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 6 QW-R502-633.b Datasheet pdf - http://www.DataSheet4U.co.kr/ 15N40 „ Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS(Cont.) Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT RG + VDS L ISD VGS VDD Driver Same Type as DUT dv/dt controlled by RG ISD controlled by pulse period www.DataSheet.net/ UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 6 QW-R502-633.b Datasheet pdf - http://www.DataSheet4U.co.kr/ 15N40 Preliminary Power MOSFET www.DataSheet.net/ UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or cont.


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