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4N70K

Unisonic Technologies

700V N-CHANNEL POWER MOSFET

UNISONIC TECHNOLOGIES CO., LTD 4N70K 4.4A, 700V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N70K is a high voltage pow...


Unisonic Technologies

4N70K

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Description
UNISONIC TECHNOLOGIES CO., LTD 4N70K 4.4A, 700V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N70K is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche. This high speed switching power MOSFET is usually used in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.  FEATURES * RDS(ON) < 2.8Ω @VGS = 10 V * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness  SYMBOL Power MOSFET  ORDERING INFORMATION Note: Ordering Number Lead Free Halogen Free 4N70KL-TF3-T 4N70KG-TF3-T 4N70KL-T2Q-T 4N70KG-T2Q-T Pin Assignment: G: Gate D: Drain S: Source Package TO-220F TO-262 Pin Assignment 123 GDS GDS Packing Tube Tube  MARKING www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 6 QW-R502-841.C 4N70K Power MOSFET  ABSOLUTE MAXIMUM RATINGS (TA = 25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage Gate-Source Voltage VDSS 700 V VGSS ±30 V Avalanche Current (Note 2) Drain Current Continuous Pulsed (Note 2) Avalanche Energy Single Pulsed (Note 3) Repetitive (Note 2) Peak Diode Recovery dv/dt (Note 4) IAR ID IDM EAS EAR dv/dt 4.4 A 4.4 A 17.6 A 120 mJ 10.6 mJ 4.5 V/ns Power Dissipation TO-220F TO-262 PD 36 106 W Junction Temperature Operating Temperature TJ TOPR +150 -55 ~ +150 °С °С Storage T...




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