UT2301Z

UNISONIC TECHNOLOGIES CO., LTD UT2301Z -2.8A, -20V P-CHANNEL ENHANCEMENT MODE POWER MOSFET  DESCRIPTION The UTC UT2301Z is a P-channel enhancement mode power MOSFET with fast switching speed, low on-resistance and favorable stabilization. It can be used in commercial and industrial surface mount applications and suited for low voltage applications such as DC/DC converters.  FEATURES * Very High Density Cell Design for Low On-Resistance * Very Good Thermal and Electrical Capabilities  SYMBOL 3.Drain Power MOSFET 1.Gate 2.Source  ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package UT2301ZL-AE3-R UT2301ZG-AE3-R SOT-23 Note: Pin Assignment: G: Gate S: Source D: Drain Pin Assignment 123 GSD Packing Tape Reel  MARKING www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 4 QW-R502-281.J UT2301Z Power MOSFET  ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified) PARAMETER SYMBOL RATING UNITS Drain-Source Voltage Gate-Source Voltage VDS -20 V VGS ±8 V Continuous Drain Current Pulsed Drain Current (Note 2, 3) ID -2.8 A IDM -10 A Total Power Dissipation (Note 4) Junction Temperature PD 1.25 W TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by maximum ju...