UT2309

UNISONIC TECHNOLOGIES CO., LTD UT2309 P-CHANNEL ENHANCEMENT MODE  DESCRIPTION The UT2309 is P-channel power MOSFET, designed with high density cell with fast switching speed, ultra low on-resistance and excellent thermal and electrical capabilities. Used in commercial and industrial surface mount applications and suited for low voltage applications such as DC/DC converters.  SYMBOL 3.Drain Power MOSFET 1.Gate 2.Source  ORDERING INFORMATION Ordering Number Lead Free Halogen Free UT2309L-AE2-R UT2309G-AE2-R UT2309L-AE3-R UT2309G-AE3-R Note: Pin Assignment: G: Gate S: Source D: Drain Package SOT-23-3 SOT-23 Pin Assignment 1 2 3 G S D G S D Packing Tape Reel Tape Reel  MARKING www.unisonic.com.tw Copyright © 2022 Unisonic Technologies Co., Ltd 1 of 4 QW-R502-148.N UT2309 Power MOSFET  ABSOLUTE MAXIMUM RATINGS(TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage Gate-Source Voltage VDSS -30 V VGSS ±20 V Continuous Drain Current (Note 3) ID Pulsed Drain Current (Note 1, 2) IDM -3.7 A -12 A Total Power Dissipation SOT-23-3 SOT-23 PD 1.1 W 1.2 W Junction Temperature Storage Temperature TJ TSTG +150 °C -55 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.  THERMAL DATA PARAMETER Junction to Ambient (Note 3) SOT-23-3 SOT...