UT2309A

UNISONIC TECHNOLOGIES CO., LTD UT2309A Preliminary -3.7A, -30V P-CHANNEL ENHANCEMENT MODE POWER MOSFET  DESCRIPTION The UT2309A is a P-channel power MOSFET, designed with high density cell with fast switching speed, ultra low on-resistance and excellent thermal and electrical capabilities. Used in commercial and industrial surface mount applications and suited for low voltage applications such as DC/DC converters.  SYMBOL 3.Drain Power MOSFET 1.Gate 2.Source  ORDERING INFORMATION Ordering Number Lead Free Halogen Free UT2309AL-AE2-R UT2309AG-AE2-R UT2309AL-AE3-R UT2309AG-AE3-R Note: Pin Assignment: G: Gate S: Source D: Drain Package SOT-23-3 SOT-23 Pin Assignment 123 GSD GSD Packing Tape Reel Tape Reel  MARKING www.unisonic.com.tw Copyright © 2016 Unisonic Technologies Co., Ltd 1 of 4 QW-R210-044.a UT2309A Preliminary Power MOSFET  ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage Gate-Source Voltage VDSS -30 V VGSS ±20 V Continuous Drain Current Pulsed Drain Current Continuous Pulsed (Note 2) ID IDM -3.7 A -12 A Avalanche Current (Note 2) Avalanche Energy Single Pulsed (Note 3) IAR EAS -12 A 7.2 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 1.1 V/ns Total Power Dissipation PD 1.38 W Junction Temperature Storage Temperature TJ TSTG +150 -55 ~ +150 °C °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. ...