UT2311

UNISONIC TECHNOLOGIES CO., LTD UT2311 -4.0A, -20V P-CHANNEL ENHANCEMENT MODE MOSFET  FEATURES * Extremely low on-resistance due to high density cell * Perfect thermal performance and electrical capability with advanced technology of trench process  SYMBOL Power MOSFET  ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package Pin Assignment 123456 Packing UT2311L-AE3-R UT2311G-AE3-R SOT-23 G S D - - - Tape Reel UT2311L-K06B-2020-R UT2311G-K06B-2020-R DFN2020-6B D D G S D D Tape Reel Note: Pin Assignment: G: Gate S: Source D: Drain  MARKING SOT-23 DFN2020-6B www.unisonic.com.tw Copyright © 2022 Unisonic Technologies Co., Ltd 1 of 4 QW-R502-365.F UT2311 Power MOSFET  ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS -20 V Gate-Source Voltage VGSS ±8 V Continuous Drain Current ID -4 A Pulsed Drain Current IDM -20 A Power Dissipation (TA=25°C) (Note 2) SOT-23 DFN2020-6B PD 1.25 W 1.67 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Surface mounted on 1 in 2 copper pad of FR4 board.  THERMAL CHARACTERISTICS PARAMETER Junction to Ambient (PCB mounted) SOT-23 DFN2020-6B Note: Surface Mounted on FR4 board t ≤...