UT2312

UNISONIC TECHNOLOGIES CO., LTD UT2312 5A, 20V N-CHANNEL ENHANCEMENT MODE MOSFET  DESCRIPTION The UT2312 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.  FEATURES * RDS(ON) ≤ 33 mΩ @ VGS =4.5V, ID =5.0 A * RDS(ON) ≤ 40 mΩ @ VGS =2.5 V, ID =4.0 A * Advanced trench process technology * Excellent thermal and electrical capabilities * High density cell design for ultra low on-resistance  SYMBOL Power MOSFET  ORDERING INFORMATION Ordering Number Lead Free Halogen Free UT2312L-AE2-R UT2312G-AE2-R UT2312L-AE3-R UT2312G-AE3-R UT2312L-S08-R UT2312G-S08-R Note: Pin Assignment: G: Gate S: Source D: Drain Package SOT-23-3 SOT-23 SOP-8 Pin Assignment 12345678 Packing G S D - - - - - Tape Reel G S D - - - - - Tape Reel S S S G D D D D Tape Reel www.unisonic.com.tw Copyright © 2018 Unisonic Technologies Co., Ltd 1 of 3 QW-R502-205.H UT2312  MARKING SOT-23-3 / SOT-23 Power MOSFET SOP-8 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 4 QW-R502-205.H UT2312 Power MOSFET  ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 20 V Gate-Source Voltage Continuous Drain Current VGSS ID ±8 5 V A Pulsed Drain Current Power Dissipation (TA =25°C) (Note 2) SOT-23-3 SOT-23 SOP-8 IDM PD 15 A 1.25 W 2W Junction Temperature TJ +150 °C Storage T...