UT2312 | Unisonic Technologies
N-CHANNEL MOSFET
UNISONIC TECHNOLOGIES CO., LTD UT2312
5A, 20V N-CHANNEL ENHANCEMENT MO.
N-CHANNEL MOSFET
UNISONIC TECHNOLOGIES CO., LTD UT2312
5A, 20V N-CHANNEL ENHANCEMENT MODE MOSFET
DESCRIPTION
The UT2312 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.
FEATURES
* RDS(ON) ≤ 33 mΩ @ VGS =4.5V, ID =5.0 A * RDS(ON) ≤ 40 mΩ @ VGS =2.5 V, ID =4.0 A * Advanced t.
- UT2312 | Unisonic Technologies
- N-CHANNEL MOSFET
- UNISONIC TECHNOLOGIES CO., LTD UT2312
5A, 20V N-CHANNEL ENHANCEMENT MODE MOSFET
DESCRIPTION
The UT.
- UNISONIC TECHNOLOGIES CO., LTD UT2312
5A, 20V N-CHANNEL ENHANCEMENT MODE MOSFET
DESCRIPTION
The UT2312 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.
FEATURES
* RDS(ON) ≤ 33 mΩ @ VGS =4.5V, ID =5.0 A * RDS(ON) ≤ 40 mΩ @ VGS =2.5 V, ID =4.0 A * Advanced trench process technology * Excellent thermal and e.
- UT2312H | UTC
- N-CHANNEL POWER MOSFET
- UNISONIC TECHNOLOGIES CO., LTD UT2312H
5A, 20V N-CHANNEL ENHANCEMENT MODE MOSFET
DESCRIPTION The U.
- UNISONIC TECHNOLOGIES CO., LTD UT2312H
5A, 20V N-CHANNEL ENHANCEMENT MODE MOSFET
DESCRIPTION The UT2312H uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.
FEATURES * RDS(ON) ≤ 55 mΩ @ VGS =4.5V, ID =5.0 A * RDS(ON) ≤ 85 mΩ @ VGS =2.5 V, ID =4.0 A * Advanced trench process technology * Excellent thermal and.
