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UTT108N03 Dataheets PDF



Part Number UTT108N03
Manufacturers Unisonic Technologies
Logo Unisonic Technologies
Description N-CHANNEL POWER MOSFET
Datasheet UTT108N03 DatasheetUTT108N03 Datasheet (PDF)

UNISONIC TECHNOLOGIES CO., LTD UTT108N03 30V, 108A N-CHANNEL POWER MOSFET „ DESCRIPTION Power MOSFET As advanced N-channel level power MOSFET, the UTT108N03 is produced using UTC’s advanced trench technology, which has been specially tailored to minimize the on-resistance and maintain low gate charge for superior switching performance. 1 „ FEATURES TO-220 * RDS(ON) = 6.0mΩ @VGS = 10V * Low Capacitance * Optimized Gate Charge * Fast Switching Capability * Avalanche Energy Specified „ SYM.

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UNISONIC TECHNOLOGIES CO., LTD UTT108N03 30V, 108A N-CHANNEL POWER MOSFET „ DESCRIPTION Power MOSFET As advanced N-channel level power MOSFET, the UTT108N03 is produced using UTC’s advanced trench technology, which has been specially tailored to minimize the on-resistance and maintain low gate charge for superior switching performance. 1 „ FEATURES TO-220 * RDS(ON) = 6.0mΩ @VGS = 10V * Low Capacitance * Optimized Gate Charge * Fast Switching Capability * Avalanche Energy Specified „ SYMBOL 2.Drain 1.Gate www.DataSheet.net/ 3.Source „ ORDERING INFORMATION Package TO-220 Pin Assignment 1 2 3 G D S Packing Tube Ordering Number Lead Free Halogen Free UTT108N03L-TA3-T UTT108N03G-TA3-T Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2011 Unisonic Technologies Co., Ltd 1 of 5 QW-R502-696.A Datasheet pdf - http://www.DataSheet4U.co.kr/ UTT108N03 „ ABSOLUTE MAXIMUM RATINGS (TC =25°C, unless otherwise specified) Power MOSFET PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±20 V Drain Current ID 108 A Pulsed Drain Current (Note 2) IDM 432 A Avalanche Energy (Note 3) EAS 580 mJ Power Dissipation 107 W PD Junction Temperature TJ +175 °C Strong Temperature TSTG -55 ~ +175 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. tP≤10μs, pulsed, Ta=25°C 3. VGS=10V, TJ=25°C, ID=35A, VS≤25V, tp=0.25ms, RGS=50Ω „ THERMAL DATA SYMBOL θJA θJC RATINGS 62.5 1.4 UNIT °C /W °C /W PARAMETER Junction to Ambient Junction to Case „ ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified) SYMBOL BVDSS IDSS IGSS VGS(TH) RDS(ON) TEST CONDITIONS VGS=0V, ID=250µA VDS=30V, VGS=0V VDS=0V, VGS=±20V www.DataSheet.net/ PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current ON CHARACTERISTICS Gate Threshold Voltage Static Drain-Source On-Resistance MIN 30 TYP MAX UNIT V µA nA V mΩ mΩ pF pF pF nC nC nC ns ns ns ns 0.05 0.02 1 4.2 1 100 3 5.3 6.6 VDS=VGS, ID=1mA VGS=10V, ID=25A VGS=5V, ID=25A DYNAMIC PARAMETERS Input Capacitance CISS VDS=25V, VGS=0V, f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge QG VDD =15V, VGS =5V, ID =40A Gate Source Charge QGS Gate Drain Charge QGD Turn-ON Delay Time tD(ON) Turn-ON Rise Time tR VDD=15V, RG=10Ω, VGS=5V, RD=0.6Ω Turn-OFF Delay Time tD(OFF) Turn-OFF Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD IS=108A, VGS=0 V Maximum Pulsed Drain-Source Diode ISM (Note) Forward Current Body Diode Reverse Recovery Time tRR IS=20A, dIS/dt=-100A/μs, VGS=0V Body Diode Reverse Recovery Charge QRR Note: tP≤10μs, pulsed 3200 580 400 56 16 14 24 102 53 54 1.25 432 34 27 V A ns nC UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 3 QW-R502-696.A Datasheet pdf - http://www.DataSheet4U.co.kr/ UTT108N03 „ Power MOSFET TYPICAL CHARACTERISTICS Drain Current vs. Drain-Source Breakdown Voltage Drain Current vs. Gate Threshold Voltage 1200 1000 Drain Current, ID (µA) 0 20 30 40 50 10 Drain-Source Breakdown Voltage, BVDSS(V) 800 600 400 200 0 0 1 2 1.5 0.5 Gate Threshold Voltage, VTH (V) 2.5 300 250 Drain Current, ID (µA) 200 150 100 50 0 Drain Current, ID (A) www.DataSheet.net/ UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Drain Current, ID (A) 3 of 3 QW-R502-696.A Datasheet pdf - http://www.DataSheet4U.co.kr/ .


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