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UTT150N06

Unisonic Technologies

N-CHANNEL POWER MOSFET

UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT150N06 150 Amps, 60 Volts N-CHANNEL POWER MOSFET „ DESCRIPTION Power MOSF...


Unisonic Technologies

UTT150N06

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Description
UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT150N06 150 Amps, 60 Volts N-CHANNEL POWER MOSFET „ DESCRIPTION Power MOSFET The UTC UTT150N06 is an N-channel Power Trench MOSFET, using UTC’s advanced technology to provide customers with a minimum on-state resistance and superior switching performance. The UTC UTT150N06 is generally applied in synchronous Rectification or DC to DC converter. „ FEATURES * 150A, 60V, RDS(ON)=3.2mΩ @ VGS=10V, ID = 75A * Low Gate Charge (Typical 102nC) * High Switching Speed * High Power and Current Handling Capability * RoHS Compliant „ SYMBOL 2.Drain www.DataSheet.net/ 1.Gate 3.Source „ ORDERING INFORMATION Package TO-220 1 G Pin Assignment 2 3 D S Packing Tube Ordering Number Lead Free Halogen Free UTT150N06L-TA3-T UTT150N06G-TA3-T Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2011 Unisonic Technologies Co., Ltd 1 of 6 QW-R502-512.a Datasheet pdf - http://www.DataSheet4U.co.kr/ UTT150N06 „ Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise noted) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 60 V Gate-Source Voltage VGSS ±20 V Peak Diode Recovery dv/dt (Note 3) dv/dt 7.0 V/ns Continuous (TC=25°C, Silicion Limited) ID 150 A Drain Current 600 A Pulsed (Note 1) IDM Single Pulsed Avalanche Energy (Note 2) EAS 872 mJ TC=25°C 231 Power Dissipation PD W Derate above 25°C 1.54 Junction Temperature TJ +150 °C Storage Temperature TSTG -55~+150 °C Note: Absolute maxi...




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