N-CHANNEL POWER MOSFET
UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT150N06
150 Amps, 60 Volts N-CHANNEL POWER MOSFET
DESCRIPTION
Power MOSF...
Description
UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT150N06
150 Amps, 60 Volts N-CHANNEL POWER MOSFET
DESCRIPTION
Power MOSFET
The UTC UTT150N06 is an N-channel Power Trench MOSFET, using UTC’s advanced technology to provide customers with a minimum on-state resistance and superior switching performance. The UTC UTT150N06 is generally applied in synchronous Rectification or DC to DC converter.
FEATURES
* 150A, 60V, RDS(ON)=3.2mΩ @ VGS=10V, ID = 75A * Low Gate Charge (Typical 102nC) * High Switching Speed * High Power and Current Handling Capability * RoHS Compliant
SYMBOL
2.Drain
www.DataSheet.net/
1.Gate
3.Source
ORDERING INFORMATION
Package TO-220 1 G Pin Assignment 2 3 D S Packing Tube
Ordering Number Lead Free Halogen Free UTT150N06L-TA3-T UTT150N06G-TA3-T Note: Pin Assignment: G: Gate D: Drain S: Source
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QW-R502-512.a
Datasheet pdf - http://www.DataSheet4U.co.kr/
UTT150N06
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise noted)
PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 60 V Gate-Source Voltage VGSS ±20 V Peak Diode Recovery dv/dt (Note 3) dv/dt 7.0 V/ns Continuous (TC=25°C, Silicion Limited) ID 150 A Drain Current 600 A Pulsed (Note 1) IDM Single Pulsed Avalanche Energy (Note 2) EAS 872 mJ TC=25°C 231 Power Dissipation PD W Derate above 25°C 1.54 Junction Temperature TJ +150 °C Storage Temperature TSTG -55~+150 °C Note: Absolute maxi...
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