UTT30N05

UNISONIC TECHNOLOGIES CO., LTD UTT30N05 30A, 50V N-CHANNEL ENHANCEMENT MODE POWER MOSFET TRANSISTOR  DESCRIPTION The UTC UTT30N05 is an N-channel enhancement power MOSFET using UTC’s advanced technology to provide the customers with perfect RDS(ON), high switching speed, high current capacity and low gate charge. The UTC UTT30N05 is suitable for motor control, AC-DC or DC-DC converters and audio amplifiers, etc.  FEATURES * RDS(ON) < 40 mΩ @ VGS=10V, ID=15A * High Switching Speed * High Current Capacity * Low Gate Charge(typical 20nC)  SYMBOL Power MOSFET  ORDERING INFORMATION Ordering Number Lead Free Halogen Free UTT30N05L-TN3-R UTT30N05G-TN3-R Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-252 Pin Assignment 123 GDS Packing Tape Reel  MARKING www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 3 QW-R502-660.b UTT30N05 Power MOSFE  ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage Gate-Source Voltage VDSS 50 V VGSS ±20 V Drain Current Continuous Pulsed ID IDM 30 A 120 A Avalanche Energy Single Pulsed Repetitive EAS EAR 300 mJ 8 mJ Power Dissipation Junction Temperature PD 44 W TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.  THERMAL CHARACTERISTICS PARAMETER Junction t...